Asml Netherlands B.v.

Frank Staals

Wim Tjibbo Tel

Marinus Jochemsen

Everhardus Cornelis Mos

Mark John Maslow

Paul Christiaan Hinnen

Patrick Warnaar

Bart Peter Bert Segers

Simon Hendrik Celine Van Gorp

Jochem Sebastiaan Wildenberg

Anton Bernhard Van Oosten

Carlo Cornelis Maria Luijten

Hans Van Der Laan

Thomas Theeuwes

Laurentius Cornelius De Winter

Erik Johannes Maria Wallerbos

Lukasz Jerzy Macht

Miguel Garcia Granda

Roy Anunciado

Joost Jeroen Ottens

Patricius Aloysius Jacobus Tinnemans

Johannes Henricus Wilhelmus Jacobs

Engelbertus Antonius Fransiscus Van Der Pasch

Emiel Jozef Melanie Eussen

Roy Werkman

Emil Peter Schmitt-Weaver

Erik Willem Bogaart

Grzegorz Grzela

Abraham Slachter

William Peter Van Drent

Koenraad Van Ingen Schenau

Sven Gunnar Krister Magnusson

Christoph Rene Konrad Cebulla Hennerkes

Erik Roelof Loopstra

Maurits Van Der Schaar

Joeri Lof

Duan-Fu Stephen Hsu

Kaustuve Bhattacharyya

Bearrach Moest

Leon Martin Levasier

Maxim Pisarenco

Rafael C Howell

Paulus Antonius Andreas Teunissen

Christian Marinus Leewis

Gerardus Carolus Johannus Hofmans

Martin Jules Marie-Emile De Nivelle

Davit Harutyunyan

Vahid Bastani

Jean-Pierre Agnes Henricus Marie Vaessen

Fuming Wang

Robert Jan Van Wijk

Eric Jos Anton Brouwer

Xiaoyang Jason Li

Cornelis Johannes Rijnierse

Carsten Andreas Köhler

Zhan Shi

Hugo Thomas Looijestijn

Tom Van Hemert

Franciscus Hendricus Arnoldus Elich

Christopher Prentice

Fei Jia

Arie Jeffrey Den Boef

Hans Butler

Marcus Adrianus Van De Kerkhof

Hugo Augustinus Joseph Cramer

Scott Anderson Middlebrooks

Herman Philip Godfried

Steven Erik Steen

Adrianus Cornelis Matheus Koopman

Gerrit Johannes Nijmeijer

Ralph Brinkhof

Stoyan Nihtianov

Reiner Maria Jungblut

Peter Hanzen Wardenier

Anastasius Jacobus Anicetus Bruinsma

Jin Lian

Rene Marinus Gerardus Johan Queens

Mohammadreza Hajiahmadi

Wolfgang Helmut Henke

Peter David Engblom

Bert Verstraeten

Brennan Peterson

Erik Johan Koop

Zhuangxiong Huang

Paulus Jacobus Maria Van Adrichem

Johannes Marcus Maria Beltman

Jan-Jaap Kuit

Roeland Nicolaas Maria Vanneer

Alexander Hendrikus Martinus Van Der Hoff

Lorenzo Tripodi

Roland Pieter Stolk

Jan-Willem Gemmink

Valerio Altini

Pierre-Yves Jerome Yvan Guittet

Eelco Van Setten

Tanbir Hasan

Farzad Farhadzadeh

Laurent Michel Marcel Depre

Fahong Li

Yasri Yudhistira

A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Computational metrology

Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.

Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method

A method for configuring an apparatus for providing structures to a layer on a substrate, the method including: obtaining first data including substrate specific data as measured and/or modeled before the providing of the structures to the layer on the substrate; and determining a configuration of the apparatus for at least two different control regimes based on the first data and the use of a common merit function including parameters associated with the at least two control regimes.

Method for controlling a lithographic apparatus and associated apparatuses

A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

Method of determining control parameters of a device manufacturing process

Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

Metrology apparatus and method for determining a characteristic of one or more structures on a substrate

A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modelled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on the optimization data and the substrate specific metrology data.

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

Wavefront optimization for tuning scanner based on performance matching

A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

Method and system to monitor a process apparatus

Disclosed is a method for selecting a structure for focus monitoring. The method comprises: simulating a Bossung response with focus of a focus dependent parameter, for one or more different structures; and selecting a structure for focus monitoring in a manufacturing process based on the results of said simulating step. The simulating step may be performed using a computational lithography simulation.

A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

Separation of contributions to metrology data

A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modeled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on the optimization data and the substrate specific metrology data.

A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

Method for optimization of a lithographic process

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Eindhoven, Netherlands

Frank Staals