E.i. Dupont De Nemours and Company

Commonwealth Scientific and Industrial Research Organisation

Cda Processing Limited Liability Company

Frank L Schadt, Iii

Andrew Edward Feiring

Michael Fryd

Viacheslav Alexandrovich Petrov

Jerald Feldman

William Brown Farnham

Thomas Eugene Dueber

Larry L Berger

Fredrick Claus Zumsteg, Jr

Mookkan Periyasamy

Mark Andrew Harmer

Christopher P Junk

Bruce E Smart

Gary N Taylor

Arthur J Taggi

Michael Karl Crawford

Zoe Schnepp

William M Hardam

Robert Clayton Wheland

Lynda Kaye Johnson

Wilson Tam

James R Sounik

Weiming Qiu

Roger Harquail French

John Donald Summers

Eugene G Sommerfeld

Yueh-Ling Lee

Hoang Vi Tran

Frederick Claus Zumsteg, Jr

Stephen E Vargo

Periyasamy Mookkan

Chester E Balut

Disclosed is an insecticidal composition comprising by weight based on total weight of composition Also disclosed is a geotropic propagule coated with insecticidal composition. Further disclosed is a liquid composition comprising the insecticidal composition, and method for protecting a geotropic propagule and plant derived therefrom a phytophagous insect pest.

Branched copolymer/anthranilic diamide compositions for propagule coating

A method for protecting a chuck membrane in a reactive ion etcher during plasma processing is described. The method utilizes a photoresist as a protective layer. Suitable photoresists can be used in this invention to not only image a semiconductor substrate to protect areas where vias and/or cavities are not desired during plasma processing but also to protect the chuck membrane(s) of the reactive ion etcher from being damaged and/or contaminated during plasma processing. Both negative-working and positive-working photoresists can be used.

Method for membrane protection during reactive ion/plasma etching processing for via or cavity formation in semiconductor manufacture

This disclosure relates to compositions and methods for using such compositions to provide protective coatings, particularly of electronic components. Fired-on-foil ceramic capacitors coated with a polybenzoxazole encapsulant which may be embedded in printed wiring boards are disclosed.

Screen-printable encapsulants based on soluble polybenzoxazoles

Hydrofluoroalkanesulfonates of the general formula R&#x2014;O&#x2014;CXH&#x2014;CX&#x2014;SOM, where R is selected from the group consisting of alkyl groups, functionalized alkyl groups, and alkenyl groups; X is selected from the group consisting of hydrogen and fluorine with the proviso that at least one X is fluorine; and M is a cation, are made by reacting fluorovinyl ether with aqueous sulfite solution. Organic onium hydrofluoroalkanesulfonates are useful as ionic liquids and photoacid generators.

Hydrofluoroalkanesulfonic acids and salts from fluorovinyl ethers

Hydrofluoroalkanesulfonic acids from fluorovinyl ethers

The present invention relates to novel photoresist compositions and processes for preparing the same utilizing polymers having a low polydispersity via the use of certain chain transfer agents (CTA) with certain monomers to provide said polymers. The polymers incorporating the chain transfer agents can be homopolymers, or made with additional monomers to provide copolymers. These polymers/copolymers are then converted into photoresist compositions for use as such.

Photoresist compositions and processes for preparing the same

The invention pertains to low polydispersity acrylic polymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity polymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography

The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers

The invention pertains to low polydispersity copolymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity copolymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Low-polydispersity photoimageable polymers and photoresists and processes for microlithography

The present invention provides novel fluorine-containing copolymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered heterocyclic ring and, optionally, other components. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The copolymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography

This invention provides a fluorine-containing copolymer having a repeat unit derived from at least one fluorinated olefin and a repeat unit derived from at least one polycyclic ethylenically unsaturated monomer having pendant hydroxyl or esterified hydroxyl groups, and optionally other repeat units, typically derived from an acrylate. These polymers have high transparency at short wavelengths such as 193 nm and 157 nm, and provide good plasma etch resistance and adhesive properties. Also provided are photoresist compositions and substrates coated therewith.

Fluorinated polymers useful as photoresists, and processes for microlithography

This invention provides novel fluorine containing polymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered carbocyclic ring and, optionally, other components. The polymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Fluorinated polymers having polycyclic groups with fused 4-membered carbocyclic rings, useful as photoresists, and processes for microlithography

Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

Photoresists and processes for microlithography

Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of a fluoroalcohol functional group which simultaneously imparts high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Fluorinated polymers, photoresists and processes for microlithography

A photoresist element comprising a substrate; an etch resistant layer; and at least one photoresist layer prepared from a photoresist composition comprising a polymer selected from the group consisting of: (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: &#x2014;C(R)(R')OH, wherein Rand R&#x2032; are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CXCYwhere X&#x2550;F or CFand Y&#x2550;&#x2014;H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CXCY; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; and (B) at least one photoactive component.

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Wilmington, DE, United States of America

Frank L Schadt, Iii