Rca Inc.

General Electric Company

Frank Kolondra

Chung P Wu

Disclosed herein is a method of using an apparatus for ion implanation providing a flood of electrons to neutralize the charge on an ion-implanted wafer after implantation to prevent electrostatic sticking attraction between the wafer and the support mechanism.

Method of reducing electrostatic charge on ion-implanted devices

There is disclosed herein an ion implantation apparatus providing for electron flooding during ion implantation to not only neutralize the positive space-charge on an ion beam but also provide a slightly negative space-charge on the beam whereby accumulated positive charges on an insulated device is obviated and only harmless negative charges remain.

Method for preventing arcing in a device during ion-implantation

An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.

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Delaware, NJ, United States of America

Frank Kolondra