Nxp USA, Inc.

Frank Danaher

Michael Lee Fraser

Jason R Fender

Audel Sanchez

David James Dougherty

Jerry Lynn White

Hamdan Ismail

Aruna Manoharan

Overmolded microelectronic packages containing knurled base flanges are provided, as are methods for producing the same. In various embodiments, the overmolded microelectronic package includes a molded package body, at least one microelectronic device contained in the molded package body, and a base flange to which the molded package body is bonded. The base flange includes, in turn, a flange frontside contacted by the molded package body, a device attachment region located on the flange frontside and to which the at least one microelectronic is mounted, and a knurled surface region. The knurled surface region includes a first plurality of trenches formed in the base flange and arranged in a first repeating geometric pattern. The molded package body extends or projects into the first plurality of trenches to decrease the likelihood of delamination of the molded package body from the base flange.

Overmolded microelectronic packages containing knurled flanges and methods for the production thereof

A monolithic integrated circuit includes first and second pluralities of parallel-connected transistor elements (e.g., transistor fingers). To spread heat in the IC, the first and second pluralities of transistor elements are interleaved with each other and arranged in a first row. The IC also may include third and fourth pluralities of parallel-connected transistor elements arranged in a second row. The transistor elements in the first row may be series and shunt transistors of an RF switch transmit path, and the transistor elements in the second row may be series and shunt transistors of an RF switch receive path. During a transmit mode of operation, the series transistors in the transmit path and the shunt transistors in the receive path are closed. During a receive mode of operation, the shunt transistors in the transmit path and the series transistors in the receive path are closed.

Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication

Methods of fabricating integrated circuits and devices with interleaved transistor elements

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Gilbert, AZ, United States of America

Frank Danaher