Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

François Rieutord

Frédéric Mazen

Oleg Kononchuk

Didier Landru

Nadia Ben Mohamed

Hubert Moriceau

Shay Reboh

Laurent Grenouillet

Yves Morand

Frank Fournel

Ludovic Ecarnot

Christophe Morales

Damien Massy

Thierry Salvetat

Thierry Chevolleau

Frédéric Milesi

Philippe Montmayeul

Helen Grampeix

Jean-Michel Hartmann

Marianne Coig

Jean-Daniel Penot

Guillaume Berre

Caroline Ventosa

Laure Libralesso

Oleg Kononchuck

Benoît Bataillou

A method for preparing a thin layer comprises a weakening step for forming a weakened zone in a central portion of a donor substrate, the weakened zone not extending into a peripheral portion of the donor substrate; a step of joining the main face of the donor substrate to a receiver substrate to form an assembly to be split; and a step of separating the assembly to be split, the separating step comprising a heat treatment resulting in the freeing of the thin layer from the donor substrate at the central portion thereof only. The method also comprises, after the separating step, a detaching step comprising the treating of the assembly to be split in order to detach the peripheral portion of the donor substrate from the receiver substrate.

Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion

A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and—applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

Process for hydrophilically bonding substrates

A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

Method for detecting the splitting of a substrate weakened by implanting atomic species

Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

Substrates including useful layers

A method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity includes forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which the cavity is buried, and separating the packaging by fracturing along the embrittlement plane. The separating causes a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. The method also includes, prior to making the packaging, implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, diffusing the species into the cavity.

Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species

This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation.

System for measuring a spacing zone in a substrate

Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.

Nitrogen-plasma surface treatment in a direct bonding method

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Saint Egreve, France

François Rieutord