Soitec

Francois Boedt

Sébastien Kerdiles

Didier Landru

Walter Schwarzenbach

Nadia Ben Mohamed

Nicolas Daval

Ludovic Ecarnot

Carole David

Carine Duret

Guillaume Chabanne

Eric Butaud

Olivier Ledoux

Xavier Schneider

Roland Brun

Aurelia Pierret

Isabelle Guerin

The invention relates to a process for manufacturing a semiconductor substrate, characterized in that it comprises providing at least one donor semiconductor substrate comprising at least one useful silicon layer; inspecting the donor substrate via an inspecting machine in order to detect whether the useful layer contains emerging cavities of a size larger than or equal to a critical size, said critical size being strictly smaller than 44 nm; and manufacturing a semiconductor substrate comprising at least part of the useful layer of the donor substrate if, considering cavities of a size larger than or equal to the critical size, the density or number of cavities in the useful layer of the donor substrate is lower than or equal to a critical defect density or number.

Process for manufacturing a semiconductor substrate, and semiconductor substrate obtained

The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

Process for manufacturing a composite structure

A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

Method for transferring a layer from a single-crystal substrate

The invention relates to a process for treating a structure of semiconductor-on-insulator type successively comprising a support substrate, a dielectric layer and a semiconductor layer having a thickness of less than or equal to 100 nm, the semiconductor layer being covered with a sacrificial oxide layer, comprising measuring, at a plurality of points distributed over the surface of the structure, the thickness of the sacrificial oxide layer and of the semiconductor layer, so as to produce a mapping of the thickness of the semiconductor layer and to determine, from the measurements, the average thickness of the semiconductor layer, selective etching of the sacrificial oxide layer so as to expose the semiconductor layer, and carrying out a chemical etching of the semiconductor layer, the application, temperature and/or duration conditions of which are adjusted as a function of the mapping and/or of the mean thickness of the semiconductor layer, so as to thin, at least locally, the semiconductor layer by a thickness identified as being an overthickness at the end of the measurement step.

Process for treating a semiconductor-on-insulator structure for improving thickness uniformity of the semiconductor layer

The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness.

Process for thinning the active silicon layer of a substrate of 'silicon on insulator' (SOI) type

Growing community of inventors

Meylan, France

Francois Boedt