Canon Anelva Corporation

Franck Ernult

Eisaku Watanabe

Tetsuro Ogata

A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Sputtering apparatus, sputter deposition method, and analysis apparatus

The present invention provides a method for manufacturing a semiconductor memory element including a chalcogenide material layer and an electrode layer, each having an improved adhesion, and a sputtering apparatus thereof. One embodiment of the present invention is the method for manufacturing a semiconductor memory element including: a first step of forming the chalcogenide material layer (); and a second step of forming a second electrode layer () on the chalcogenide material layer () by sputtering through the use of a mixed gas of a reactive gas and an inert gas, while applying a cathode voltage to a target. In the second step, introduction of the reactive gas is carried out at a flow rate ratio included in a hysteresis area () appearing in the relationship between a cathode voltage applied to the cathode and the flow rate ratio of the reactive gas in the mixed gas.

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Chofu, Japan

Franck Ernult