Industrial Technology Research Institute

National Taiwan University

Fon Yuan

Chee-Wee Liu

Jin-Wei Shi

Yu-Min Hsu

Zing-Way Pei

Chung-Hsun Lin

A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied.

Method for utilizing rough insulator to enhance metal-insulator-semiconductor reliability

A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected to an external voltage, the holes accumulated at the junction of the base and emitter can be quickly removed. This solves the problem in the prior art that using a bias between the base and the emitter to remove holes usually results in a large dark current (bias current), power consumption, and diminishing optoelectronic conversion gain.

Semiconductor phototransistor

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Taipei, Taiwan

Fon Yuan