Infineon Technologies Ag

Florian Brandl

Bernhard Winkler

Robert Gruenberger

Wolfram Langheinrich

Dirk Hammerschmidt

Christian Geissler

Manfred Fries

Franz-Peter Kalz

Markus Eckinger

Claus Waechter

Dirk Meinhold

Roland Meier

Sebastian Luber

A pressure sensor is provided. The pressure sensor includes a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element; a microelectromechanical system (MEMS) structure including a membrane configured to move, depending on a pressure applied thereto, relative to the magnetic sensor element; and a field influencing element configured to modify the magnetic field based on a movement of the membrane, wherein the field influencing element is arranged on the membrane.

Pressure sensors and method for forming a MEMS pressure sensor

A microelectromechanical system (MEMS) device contains a movable MEMS structure, a first support structure in which an edge of the MEMS structure is attached, a cavity which is bounded by the MEMS structure and the first support structure, and a second support structure which is attached in the cavity and at the edge of the MEMS structure and is configured so as to support the edge of the MEMS structure mechanically.

MEMS devices with support structures and associated production methods

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package

A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.

Segmented stress decoupling via frontside trenching

A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

Deposition of protective material at wafer level in front end for early stage particle and moisture protection

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.

Mechanical stress decoupling for microelectromechanical systems (MEMS) elements with gel-filling

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.

Growing community of inventors

Maxhütte-Haidhof, Germany

Florian Brandl