Applied Materials, Inc.

Flora Fong-Song Chang

Zhiyuan Ye

Schubert S Chu

Patricia M Liu

Hua Chung

Errol Antonio C Sanchez

Abhishek Dube

Xuebin Li

Ala Moradian

Zuoming Zhu

Enle Choo

Shu-Kwan Danny Lau

Jenny Lin

Bindusagar Marath Sankarathodi

Surendra Singh Srivastava

Xinyu Bao

Zhepeng Cong

Vilen K Nestorov

Maxim Shaposhnikov

Nyi O Myo

Martin A Hilkene

Errol C Sanchez

Saurabh Chopra

Balakrishnam R Jampana

Avinash Shervegar

Methods for detection using optical emission spectroscopy in which an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Methods for detection using optical emission spectroscopy

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

Method and apparatus for low temperature selective epitaxy in a deep trench

Embodiments of the present disclosure relate to methods for forming a source/drain extension. In one embodiment, a method for forming an nMOS device includes forming a gate electrode and a gate spacer over a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to expose a side wall and a bottom, forming a silicon arsenide (Si:As) layer on the side wall and the bottom, and forming a source/drain region on the Si:As layer. During the deposition of the Si:As layer and the formation of the source/drain region, the arsenic dopant diffuses from the Si:As layer into a third portion of the semiconductor fin located below the gate spacer, and the third portion becomes a doped source/drain extension region. By utilizing the Si:As layer, the doping of the source/drain extension region is controlled, leading to reduced contact resistance while reducing dopants diffusing into the channel region.

Arsenic diffusion profile engineering for transistors

An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber

A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Substrate processing monitoring

The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

In-situ temperature mapping for epi chamber

Embodiments of the present disclosure relate to a transistor and methods for forming a transistor. A transistor includes a gate electrode structure disposed over a channel region, a source/drain extension region disposed adjacent to the channel region, and a source/drain region disposed on the source/drain extension region. The source/drain region includes antimony (Sb). The method of forming a transistor includes forming the source/drain extension region and forming the source/drain region on the source/drain extension region. The antimony helps prevent unwanted migration of dopants from the source/drain region to the source/drain extension region.

Transistor and method for forming a transistor

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.

Method and apparatus for selective epitaxy

A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.

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Saratoga, CA, United States of America

Flora Fong-Song Chang