International Business Machines Corporation

Information Business Machines Corporation

Fletcher Jones

Joseph S Logan

Christopher Vincent Jahnes

Michael A Russak

Bennett Robinson

Kenneth J Muroski, Jr

Henry R Voelker

A dielectric layer for use in a magneto-optic storage medium contains a compound glass of SiO,&mdash;MO,, SiO,&mdash;M,O,, or SiO,&mdash;M,O,and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

Dielectric-layer for magneto-optic storage media structures

Processes for producing and using a novel CVD apparatus for depositing silicon layers onto suitable substrates and for the in-situ etching removal of background silicon deposits from the interior walls of the apparatus. The invention comprises using an apparatus having a fused quartz reaction chamber and precoating the interior wall of the reaction chamber with a thin continuous barrier layer of Al.sub.2 O.sub.3 which is inert to the etching gas introduced for the removal of the background silicon deposits.

Plasma CVD apparatus and processes

A high rate, low contamination, non-reactive sputter etching or deposition apparatus is disclosed herein. The apparatus is comprised of a pair of parallel plate electrodes, cathode and substrate and an additional or wall electrode means surrounding said other electrode means. The wall electrode can be made to be coplanar with said other electrodes and the area of said electrodes are designed so that the wall electrode is resputtered eliminating contamination. The electrodes are housed in a vacuum chamber with inlet means for introducing a non-reactive gas into said chamber. Means are provided for supplying said RF voltage to said electrodes both in and out of phase and for varying the magnitude of the substrate electrode RF voltage with respect to the magnitude of the cathode voltage. Thick insulator rings are used to reduce stray capacitance between the wall electrode and ground whereby the outer chamber (normally grounded) forms a low inductance path between the cathode electrode and acts as a shield for the inner chamber RF potential.

Low contamination RF sputter deposition apparatus

A complete lithographic exposure pattern is formed in accordance with this invention by forming part of the complete pattern with electron beam radiation and forming the remaining part with light radiation. The electron beam exposure pattern part delineates all of the edges of the desired complete pattern while the optical exposure pattern part fills in any remaining regions, together forming the desired complete exposure pattern. Since all edges are delineated by electron beam radiation, any radiation sensitive layer exposed to the complete pattern will develop edges characteristic of an electron beam pattern exposure. Electron beam exposure system thruput is improved because the whole pattern is not exposed by electron beam. Preferably, the exposure width of the electron beam edge delineation is on the order of the minimum linewidth of the pattern, so that proximity effects will be automatically reduced or eliminated without requiring computation of the exposure contribution from adjacent shapes in the pattern due to lateral scattering effects and without requiring any variation in the applied electron beam exposure dose. Use of a wider exposure width for electron beam delineation of pattern edges has the advantage that alignment tolerance of the optical exposure pattern part with respect to the electron beam exposure pattern part is increased.

Hybrid electron beam and optical lithography method

Proximity effect is reduced or eliminated by breaking each shape of a lithographic exposure pattern into two parts, a perimeter part having a width on the order of the lithographic exposure pattern minimum linewidth and the remaining central part or parts (if any) which are completely surrounded by the perimeter part. The lithographic exposure pattern is then modified by moving or setting back the edges of each central part away from the perimeter part which surrounds it (similar to reducing the size of the central part) to form a nominally unexposed band separating each central part from the perimeter part which surrounds it. The width of the nominally unexposed band in the modified exposure pattern is preferably chosen as large as possible so long as the condition is met that upon developing a radiation sensitive layer directly exposed to the modified exposure pattern, the nominally unexposed band develops (i.e., dissolves, resists dissolution, or is otherwise modified) substantially as if it were also exposed. The nominally unexposed band is exposed, in fact, by electrons scattered from the directly exposed part(s) of the shape (the perimeter part plus the central part, if any). The width of the nominally unexposed band is preferably about twice the edge bias applied to outside edges of each shape.

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Ossining, NY, United States of America

Fletcher Jones