Globalfoundries Singapore Pte. Ltd.

Feng Zhao

Lawrence Alfred Clevenger

Laertis Economikos

Hong Yu

Huang Liu

John Leonard Sudijono

Liang-Choo Hsia

Meisheng Zhou

Wu Ping Liu

A method of manufacture of an integrated circuit system includes: forming an etch stop layer over a bulk substrate; forming a buffer layer on the etch stop layer; forming a hard mask on the buffer layer; forming a through silicon via through the etch stop layer with the hard mask detected and the buffer layer removed with a low down force; and forming a passivation layer on the through silicon via and the etch stop layer.

Integrated circuit system with via and method of manufacture thereof

A polishing process in a semiconductor device fabrication process employs a polishing composition in which a gaseous phase is created within the polishing composition. During a polishing process, the gaseous phase dynamically responds to changes in the surface profile of the material undergoing removal by chemical and abrasive action during polishing. The inert gas bubble density dynamically increases in proximity to surface region of the substrate being polished that are prone to dishing and erosion. The increased inert gas bubble density operates to reduce the polish removal rate relative to other regions of the substrate. The dynamic action of the gaseous phase within the polishing composition functions to selectively reduce the localized polish removal rate such that a uniformly smooth and flat polished surface is obtained that is independent of the influence of pattern density during the polishing process.

Polishing method with inert gas injection

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Singapore, Singapore

Feng Zhao