United Microelectronics Corp.

Feng-Yu Hsu

Chih-Chien Liu

Jei-Ming Chen

Chun-Chieh Huang

Su-Jen Sung

Mei-Ling Chen

Wei-Chih Chen

Shu-Jen Sung

Jim-Jey Huang

Jiann-Jen Chiou

A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.

Method for manufacturing a dual damascene opening comprising a trench opening and a via opening

An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer electrically connecting with the conductive part, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a UV cutting layer at least between the first and the second porous low-k layers, wherein the UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

Interconnect structure and fabricating method thereof

A method for fabricating an interconnect structure is described. A substrate with a conductive part thereon is provided, a first porous low-k layer is formed on the substrate, and then a first UV-curing step is conducted. A damascene structure is formed in the first porous low-k layer to electrically connect with the conductive part, and then a first UV-absorption layer is formed on the first porous low-k layer and the damascene structure. A second porous low-k layer is formed on the first UV-absorption layer, and a second UV-curing step is conducted.

Method of fabricating interconnect structure

Growing community of inventors

Tainan Hsien, Taiwan

Feng-Yu Hsu