Taiwan Semiconductor Manufacturing Comp. Ltd.

Feng-Cheng Hsu

Shin-Puu Jeng

Shuo-Mao Chen

Jui-Pin Hung

Po-Yao Lin

Jing-Cheng Lin

Po-Hao Tsai

Hsien-Wen Liu

Cheng-Yi Hong

Shu-Shen Yeh

Po-Yao Chuang

Chin-Hua Wang

Szu-Wei Lu

Ming-Chih Yew

Hsiao-Wen Lee

Chia-Kuei Hsu

Han-Hsiang Huang

Li-Hui Cheng

Mill-Jer Wang

Techi Wong

Chih-Hsien Lin

Chen-Hua Lin

Kuang-Chun Lee

Chao-Hsiang Yang

Dai-Jang Chen

Chun-Kuang Chen

Wen-Yi Lin

Hsiang-Tai Lu

Chia-Hsiang Lin

De-Dui Liao

Chien-Wei Wang

Jian-Hong Chen

Hsiao-Wei Yeh

Chih-An Lin

Arunima Banerjee

Hou-Ju Huang

Hsiang-tai Lu

Provided is a package structure including a die, a through via, an encapsulant, a warpage controlling layer, and a cap. The through via is laterally aside the die. The encapsulant laterally encapsulates the through via and the die. The warpage controlling layer covers the encapsulant and the die. The cap is laterally aside the warpage controlling layer and on the through via. The cap has a top surface higher than a top surface of the encapsulant and lower than a top surface of the warpage controlling layer.

Package structure

A method includes: forming a first interposer die, wherein the first interposer die comprises a first substrate and a first redistribution layer (RDL) over the first substrate; bonding the first interposer die to a second RDL; encapsulating the second RDL and the first interposer die with a first encapsulating layer; thinning the first interpose die to expose the first RDL; and bonding a first semiconductor die to the first RDL.

Semiconductor structure and manufacturing method thereof

A semiconductor package includes a semiconductor die, a redistribution circuit structure, a supporting structure and a protective layer. The redistribution circuit structure is located on and electrically coupled to the semiconductor die. The supporting structure is located on an outer surface of the redistribution circuit structure, wherein the supporting structure is overlapped with at least a part of the semiconductor die or has a sidewall substantially aligned with a sidewall of the semiconductor die in a vertical projection on the redistribution circuit structure along a stacking direction of the redistribution circuit structure and the supporting structure. The protective layer is located on the supporting structure, wherein the supporting structure is sandwiched between the protective layer and the redistribution circuit structure.

Semiconductor package and method of manufacturing the same

Multi-chip wafer level packages and methods of forming the same are provided. A multi-chip wafer level package includes a first tier and a second tier. The first tier includes a first redistribution layer structure and at least one chip over the first redistribution layer structure. The second tier includes a second redistribution layer structure and at least two other chips over the second redistribution layer structure. The first tier is bonded to the second tier with the at least one chip being in physical contact with the second redistribution layer structure. The total number of connectors of the at least two other chips is greater than the total number of connectors of the at least one chip.

Multi-chip packages and methods of forming the same

A semiconductor device including an integrated circuit, a dielectric layer, a plurality of connecting terminals and at least one dummy conductor is provided. The integrated circuit has a plurality of connecting pads, and the dielectric layer is disposed thereon and partially exposes the plurality of the connecting pads by a plurality of openings defined therein. The plurality of the connecting terminals is disposed on the plurality of the connecting pads exposed by the plurality of the openings. The at least one dummy conductor is disposed on the dielectric layer and electrically isolated from the integrated circuit. A substantial topology variation is between the plurality of the connecting terminals and the at least one dummy conductor. A semiconductor package having the semiconductor device is also provided.

Semiconductor package having a semiconductor device bonded to a circuit substrate through a floated or grounded dummy conductor and method of manufacturing the same

A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Semiconductor package

A semiconductor package including an insulating encapsulation, an integrated circuit component, and conductive elements is provided. The integrated circuit component is encapsulated in the insulating encapsulation, wherein the integrated circuit component has at least one through silicon via protruding from the integrated circuit component. The conductive elements are located on the insulating encapsulation, wherein one of the conductive elements is connected to the at least one through silicon via, and the integrated circuit component is electrically connected to the one of the conductive elements through the at least one through silicon via.

Semiconductor package and method manufacturing the same

A method for forming a package structure is provided. The method includes disposing a semiconductor die over a carrier substrate, wherein a removable film is formed over the semiconductor die, disposing a first stacked die package structure over the carrier substrate, wherein a top surface of the removable film is higher than a top surface of the first stacked die package structure, and removing the removable film to expose a top surface of the semiconductor die, wherein a top surface of the semiconductor die is lower than the top surface of the first stacked die package structure.

Package structure with lid and method for forming the same

A chip package structure is provided. The chip package structure includes a first redistribution structure having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip over the first surface. The chip package structure includes a first conductive pillar over the first surface and adjacent to the first chip. The chip package structure includes a second chip over the second surface. The chip package structure includes a second conductive pillar over the second surface and adjacent to the second chip. The chip package structure includes a first molding layer over the first surface and surrounding the first chip. The chip package structure includes a second molding layer over the second surface and surrounding the second chip.

Chip package structure having molding layer

A package structure and a method of forming the same are provided. The package structure includes a package substrate, an interposer substrate, and a semiconductor device. The interposer substrate is disposed over the package substrate, wherein the interposer substrate has a bottom surface facing the package substrate and a first cavity formed on the bottom surface. The semiconductor device is disposed in the first cavity. The package substrate has a top surface facing the interposer substrate and a second cavity formed on the top surface, wherein the second cavity is configured to accommodate the semiconductor device.

Chip package structure with cavity in interposer

A method includes bonding a first package component and a second package component to an interposer. The first package component includes a core device die, and the second package component includes a memory die. An Independent Passive Device (IPD) die is bonded directly to the interposer. The IPD die is electrically connected to the first package component through a first conductive path in the interposer. A package substrate is bonded to the interposer die. The package substrate is on an opposing side of the interposer than the first package component and the second package component.

Integrated circuit package and method forming same

A method includes forming a redistribution structure over a carrier, the redistribution structure having conductive features on a surface of the redistribution structure distal the carrier; forming a conductive pillar over the surface of the redistribution structure; attaching a die to the surface of the redistribution structure adjacent to the conductive pillar, where die connectors of the die are electrically coupled to the conductive features of the redistribution structure; and attaching a pre-made substrate to the conductive pillar through a conductive joint, where the conductive joint is on the conductive pillar and comprises a different material from the conductive pillar, where the conductive joint and the conductive pillar electrically couple the redistribution structure to the pre-made substrate.

Growing community of inventors

Taipei, Taiwan

Feng-Cheng Hsu