Applied Materials, Inc.

Feihu Wang

Joung Joo Lee

Srinivas Gandikota

Yixiong Yang

Jacqueline S Wrench

Annamalai Lakshmanan

Kai Wu

Xi Cen

Chunming Zhou

Seshadri Ganguli

Zhebo Chen

Nobuyuki Sasaki

Peiqi Wang

Tom Ho Wing Yu

Wei Min Chan

Ju Ik Kang

Min Heon

Wei Lei

Yong Yang

Gang Shen

Zhibo Yuan

Sang-heum Kim

Methods for depositing a metal contact stack on a substrate are described. The metal stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Low resistivity metal contact stack

Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Low resistivity tungsten film and method of manufacture

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

Methods and apparatus for processing a substrate

Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods for low resistivity and stress tungsten gap fill

Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Low resistivity DRAM buried word line stack

Methods and apparatus for low resistivity and stress tungsten gap fill

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San Jose, CA, United States of America

Feihu Wang