The South China University of Technology

Fangliang Gao

Guoqiang Li

Lei Wen

Jingling Li

Shuguang Zhang

Yunfang Guan

Zhenzhu Xu

An InN nanorod epitaxial wafer grown on an aluminum foil substrate () sequentially comprises the aluminum foil substrate (), an amorphous aluminum oxide layer (), an AlN layer () and an InN nanorod layer, () from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700&#xb0; C., the pressure of a reaction chamber is 4.0-10.0&#xd7;10Torr and the beam ratio of V/III is 20-40.

Indium nitride nanopillar epitaxial wafer grown on aluminum foil substrate and preparation method of indium nitride nanopillar epitaxial wafer

Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InGaAs buffer layer growth; (5) first InGaAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InGaAs buffer layer growth; (9) second InGaAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate

The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature InGaAs buffer layer, a high temperature InGaAs buffer layer and an InGaAs epitaxial film, arranged sequentially, wherein the low temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 350&#x2dc;380&#xb0; C.; the high temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 500&#x2dc;540&#xb0; C., and the sum of the thickness of the low temperature InGaAs buffer layer and the thickness of the high temperature InGaAs buffer layer is 10&#x2dc;20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

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Guangzhou, China

Fangliang Gao