American Air Liquide, Inc.

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Air Liquide Electronics U.S. LP

Fabrizio Marchegiani

Nathan Stafford

Venkateswara R Pallem

Rahul Gupta

James Royer

Hui Sun

Jean-Marc Girard

Vincent M Omarjee

Vijay Surla

Nicolas Blasco

Peng Zhang

Yumin Liu

Gennadiy Itov

Xiangyu Guo

Claudia Fafard

Fan Qin

Thomas J Larrabee

Phong Nguyen

A method comprises: introducing a vapor of an oxygen and iodine-containing etching compound into a chamber that contains a substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing layer, wherein the oxygen and iodine-containing etching compound has the formula CHFIO, wherein 0≤n≤10, 0≤x≤21, 0≤y≤21, 1≤z≤4 and 1≤e≤2; activating a plasma to produce an activated oxygen and iodine-containing etching compound; and allowing an etching reaction to proceed between the activated oxygen and iodine-containing etching compound and the silicon-containing film to selectively etch the silicon-containing film from the patterned mask layer, thereby forming a patterned structure.

Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures

A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CHIF, wherein a=1-10, x≥0, y≥1, z≥0, x+y+z=a, 2or 2+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CHFNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CHFN—R, where x=1-6, y=0-13, z=0-13, and Ris a C-Chydrocarbon.

Deposition of iodine-containing carbon films

Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Silicon-based self-assembling monolayer compositions and surface preparation using the same

Disclosed are methods for etching a silicon-containing film to form a patterned structure, methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask layer while forming a patterned structure and methods for increasing etch resistance of a patterned mask layer in a process of forming a patterned structure. The methods include using an activated iodine-containing etching compound having the formula CHFI, wherein 4&#x2264;n&#x2264;10, 0&#x2264;x&#x2264;21, 0&#x2264;y&#x2264;21, and 1&#x2264;z&#x2264;4 as an etching gas. The activated iodine-containing etching compound produces iodine ions, which are implanted into the patterned hardmask layer, thereby strengthening the patterned mask layer.

Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two &#x2014;SiH&#x2014; moieties, either as terminal groups (&#x2014;SiHR) or embedded in a carbosilane cyclic compound, wherein R is H, a C-Clinear, branched, or cyclic alkyl- group, a C-Clinear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CHFI, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Iodine-containing compounds for etching semiconductor structures

A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (CHFN), 1,1,2-Trifluoroethan-1-amine (Iso-CHFN), 2,2,3,3,3-Pentafluoropropylamine (CHFN), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-CHFN), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R&#x2014;CHFN) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S&#x2014;CHFN), 1,1,1,3,3,3-Hexafluoroisopropylamine (CHFN) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-CHFN) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.

Hydrofluorocarbons containing &#x2014;NHfunctional group for 3D NAND and DRAM applications

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Newark, DE, United States of America

Fabrizio Marchegiani