Abb Schweiz Ag

Audi Ag

Hitachi Energy Switzerland Ag

Hitachi Energy Ltd

Abb Power Grids Switzerland Ag

Fabian Mohn

Juergen Schuderer

Jürgen Schuderer

Felix Traub

Chunlei Liu

Slavo Kicin

Thomas Gradinger

Daniele Torresin

Daniel Kearney

Bruno Agostini

Didier Cottet

David Guillon

Gernot Riedel

Alexey Sokolov

Paul Commin

Arne Schroeder

Giovanni Salvatore

Niko Pavlicek

Swen Koenig

Markus Thut

Joonas Puukko

Chunlei Lui

Jean-Yves Loisy

An electrical contact arrangement electrically contacts at least two power semiconductor devices, and comprises at least two bond wires and at least three electrical contacts, comprising an alternating current contact, a positive direct current contact, and a negative direct current contact. Each electrical contact comprises a ground potential part; contact part; and insulation part on the ground potential part. The contact part is provided on the insulation part. At least two electrical contacts are separated by a gap between the insulation parts and the gap between the contact parts of the separated electrical contacts. A bond wire connects a first power semiconductor device on a contact part of the positive direct current contact with a contact part of the alternating current contact. A bond wire connects a second power semiconductor device on the contact part of the alternating current contact with a contact part of the negative direct current contact.

Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module

In one embodiment a power semiconductor module includes a substrate having a first substrate side for carrying an electric circuit and having a second substrate side being located opposite to the first substrate side. The second substrate side has a flat surface and is adapted for coming in contact with a cooler. A cooling area that is surrounded by a connecting area is located at the second substrate side. A first casing component of the cooler is connected to the second substrate side at the connecting area and a second casing component is connected to the first casing component such that a cooling channel for providing the cooling area with cooling fluid is provided between the first casing component and the second casing component. A cooling structure can be welded to the cooling area at the second substrate side.

Arrangement of a power semiconductor module and a cooler

A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.

Power semiconductor module with low inductance gate crossing

An electric power converter device includes a first power semiconductor module and a frame for a closed cooler. The first power semiconductor module includes a first base plate having a first main side, a second main side opposite the first main side and a lateral side surface extending along a circumferential edge of the first base plate and connecting the first and the second main side. The frame is attached to the second main side of the first base plate. The first base plate has a first step on the second main side along the circumferential edge of the first base plate to form a first recess along the circumferential edge of the first base plate, in which first recess a first portion of the frame is received.

Electric power converter device with improved integration of cooler frame

A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

Power semiconductor module with laser-welded leadframe

A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Power semiconductor package with highly reliable chip topside

A method for producing a semiconductor module, involving the steps: providing a carrier plate and a substrate having a bonding layer arranged on a surface of the carrier plate or the substrate, applying adhesive in multiple adhesive areas of the carrier plate or the substrate which are free from the bonding layer, positioning the substrate on the carrier plate such that the substrate and the carrier plate are in contact with the bonding layer and the adhesive, and joining the substrate and the carrier plate across the bonding layer by melting or sintering of the bonding layer.

Method for producing a semiconductor module by using adhesive attachment prior to sintering

Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising an outer housing; a power electronics board disposed within the housing and including a semiconductor switch structured to selectively conduct a current between a first power terminal and a second power terminal; a first heat sink coupled to the power electronics board; a plurality of thermally conductive connectors; a second heat sink coupled to the plurality of thermally conductive connectors, a control electronics board structured to control the semiconductor switch, the control electronics board being located within an enclosure formed of the second heat sink, the plurality of thermally conductive connectors, and the power electronics board.

Heat dissipation for power switches

A semi-manufactured power semiconductor module includes a substrate for bonding at least one power semiconductor chip; a first leadframe bonded to the substrate and providing power terminals; and a second leadframe bonded to the substrate and providing auxiliary terminals; wherein the first leadframe and/or the second leadframe include an interlocking element adapted for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

Manufacturing of a power semiconductor module

A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal. The at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal.

Half-bridge module with coaxial arrangement of the DC terminals

A power semiconductor module includes a substrate with a metallization layer; at least one power semiconductor chip bonded to the substrate; and a mold encapsulation partially encapsulating the semiconductor chip and the substrate; the mold encapsulation includes at least one window exposing a terminal area of the metallization layer; and a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of a central part of the mold encapsulation.

Resin encapsulated power semiconductor module with exposed terminal areas

A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.

Power module based on multi-layer circuit board

A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips are at least partially embedded onto the insulation material.

Power electronics module with first and second coolers

The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

Power semiconductor module

A semiconductor device comprises two electrodes with opposite faces; a semiconductor wafer sandwiched between the two electrodes; an outer insulating ring attached to the two electrodes and surrounding the semiconductor wafer; a middle insulating ring inside the outer insulating ring and surrounding the semiconductor wafer, whereby the middle insulating ring is made of a plastics material; and an inner insulating ring inside the middle insulating ring, whereby the inner insulating ring is made of ceramics and/or glass material. Either the middle insulating ring or the inner insulating ring has a tongue and the other thereof has a groove such that the tongue fits into the groove for their rotational alignment. The middle insulating ring and the inner insulating ring have a radial opening for receiving a gate connection of the semiconductor device.

Growing community of inventors

Ennetbaden, Switzerland

Fabian Mohn