Asml Netherlands B.v.

Evgenia Kurganova

Pieter-Jan Van Zwol

Arnoud Willem Notenboom

Adrianus Johannes Maria Giesbers

Mária Péter

David Ferdinand Vles

Maxim Aleksandrovich Nasalevich

Johan Hendrik Klootwijk

Willem-Pieter Voorthuijzen

Wilhelmus Theodorus Anthonius Johannes Van Den Einden

Aleksandar Nikolov Zdravkov

Ties Wouter Van Der Woord

Peter Simon Antonius Knapen

Hendrikus Jan Wondergem

Johannes Petrus Martinus Bernardus Vermeulen

Paul Janssen

Antonius Franciscus Johannes De Groot

Willem Joan Van Der Zande

Hrishikesh Patel

Gerrit Van Den Bosch

Chaitanya Krishna Ande

Alexander Ludwig Klein

Johannes Joseph Janssen

Marcel Peter Meijer

Wouter Rogier Meijerink

Raymond Olsman

Leonid Aizikovitsj Sjmaenok

Jim Vincent Overkamp

Tamara Druzhinina

Teis Johan Coenen

Alexey Olegovich Polyakov

Marcus Adrianus Van De Kerkhof

Gosse Charles De Vries

Johannes Christiaan Leonardus Franken

Albertus Victor Gerardus Mangnus

Dennis De Graaf

Alexey Sergeevich Kuznetsov

Mahdiar Valefi

Sander Baltussen

Olivier Christian Maurice Lugier

Sonia Castellanos Ortega

Sten Vollebregt

Marijke Scotuzzi

Ionel Mugurel Ciobica

Bastiaan Maurice Van Den Broek

Alexandar Nikolov Zdravkov

Maria Peter

Mária PÉTER

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

Method and apparatus for forming a patterned layer of material

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion to form a layer of deposited material in a pattern defined by the selected portion. The deposited material is annealed to modify the deposited material.

A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Pellicle and pellicle assembly

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Method of manufacturing a membrane assembly

A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Metal-silicide-nitridation for stress reduction

A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Simultaneous double-side coating of multilayer graphene pellicle by local thermal processing

The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.

A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.

Graphene pellicle lithographic apparatus

A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.

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Nijmegen, Netherlands

Evgenia Kurganova