Asml Netherlands B.v.

Asml Holding N.v.

Everhardus Cornelis Mos

Maurits Van Der Schaar

Arie Jeffrey Den Boef

Richard Johannes Franciscus Van Haren

Hubertus Johannes Gertrudus Simons

Peter Ten Berge

Jochem Sebastiaan Wildenberg

Roy Werkman

Frank Staals

Reiner Maria Jungblut

Leonardus Henricus Marie Verstappen

Erik Johannes Maria Wallerbos

Wim Tjibbo Tel

Franciscus Bernardus Maria Van Bilsen

Christianus Gerardus Maria De Mol

Stefan Carolus Jacobus Antonius Keij

Paul Jacques Van Wijnen

Michael Kubis

Hoite Pieter Theodoor Tolsma

Bart Peter Bert Segers

Erik Jensen

Gerald Dicker

Paul Cornelis Hubertus Aben

Nicole Schoumans

Wouter Lodewijk Elings

Hyunwoo Yu

Scott Anderson Middlebrooks

Marinus Jochemsen

Jasper Menger

Yichen Zhang

Chung-Hsun Li

Alexander Ypma

Mircea Dusa

Emil Peter Schmitt-Weaver

Peter Hanzen Wardenier

Marc Hauptmann

Vahid Bastani

Petrus Gerardus Van Rhee

Maria Kilitziraki

Patricius Aloysius Jacobus Tinnemans

Patrick Warnaar

Thomas Theeuwes

Maxim Pisarenco

Irwan Dani Setija

Henricus Johannes Lambertus Megens

Jacobus Burghoorn

Xing Lan Liu

Weitian Kou

Grzegorz Grzela

Michiel Kupers

Rene Monshouwer

Xiuhong Wei

Davit Harutyunyan

Fuming Wang

Cornelis Johannes Rijnierse

Hugo Thomas Looijestijn

Birgitt Noëlle Cornelia Liduine Hepp

Tom Van Hemert

Fei Jia

Franciscus Hendricus Arnoldus Elich

Johannes Catharinus Hubertus Mulkens

Marcus Adrianus Van De Kerkhof

Pieter Willem Herman De Jager

Hugo Augustinus Joseph Cramer

Justin Lloyd Kreuzer

Jozef Maria Finders

Hans Van Der Laan

Franciscus Godefridus Casper Bijnen

Hendrik Jan Hidde Smilde

Antoine Gaston Marie Kiers

Youping Zhang

Hakki Ergün Cekli

Ralph Brinkhof

Marcel Hendrikus Maria Beems

Andreas Fuchs

Paul Frank Luehrmann

Leon Paul Van Dijk

Chenxi Lin

Irina Lyulina

Bernardo Kastrup

David Frans Simon Deckers

David Deckers

Wolfgang Helmut Henke

Hadi Yagubizade

Victor Emanuel Calado

Remi Daniel Marie Edart

Johannes Marcus Maria Beltman

Martyn John Coogans

Wilhelmus Maria Corbeij

Bijoy Rajasekharan

Dag Sonntag

Rizvi Rahman

Cornelis Johannes Henricus Lambregts

Thomas Leo Maria Hoogenboom

Ekaterina Mikhailovna Viatkina

Amir Bin Ismail

Remco Jochem Sebastiaan Groenendijk

Adam Jan Urbanczyk

Frank Bornebroek

Christopher Prentice

A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Computational metrology

A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

Method for controlling a semiconductor manufacturing process

A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Method and apparatus for optimization of lithographic process

Substrates to be processed are partitioned based on pre-processing data that is associated with substrates before a process step. The data is partitioned using a partition rule and the substrates are partitioned into subsets in accordance with subsets of the data obtained by the partitioning. Corrections are applied, specific to each subset. The partition rule is obtained using decision tree analysis on a training set of substrates. The decision tree analysis uses pre-processing data associated with the training substrates before they were processed, and post-processing data associated with the training substrates after being subject to the process step. The partition rule that defines the decision tree is selected from a plurality of partition rules based on a characteristic of subsets of the post-processing data. The associated corrections are obtained implicitly at the same time.

Method to label substrates based on process parameters

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Methods and apparatus for measuring a property of a substrate

A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

Inspection method and apparatus and lithographic processing cell

A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

Method for optimization of a lithographic process

A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Method for determining contribution to a fingerprint

A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

Method to change an etch parameter

Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

Methods and apparatus for calculating substrate model parameters and controlling lithographic processing

A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

Method and apparatus for inspection and metrology

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Everhardus Cornelis Mos