Lam Research Corporation

Evangelos T Spyropoulos

Iqbal A Shareef

Mark Taskar

Piyush Agarwal

Clifford Erik La Croix

James Leung

Seyed Hossein Hashemi Ghermezi

A method for calibrating a gas flow metrology system for a substrate processing system includes a) measuring temperature using a first temperature sensor and a reference temperature sensor over a predetermined temperature range and determining a first transfer function; b) measuring pressure using a first pressure sensor and a reference pressure sensor over a predetermined pressure range using a first calibration gas and determining a second transfer function; c) performing a first plurality of flow rate measurements in a predetermined flow rate range with a first metrology system and a reference metrology system, wherein the first metrology system and the reference metrology system use a first orifice size and the first calibration gas; and d) scaling temperature and pressure using the first transfer function and the second transfer function, respectively, and determining a corresponding transfer function for the first calibration gas based on the first plurality of flow rate measurements.

Flow metrology calibration for improved processing chamber matching in substrate processing systems

A gas flow metrology system for a substrate processing system includes N primary valves selectively flowing gas from N gas sources, respectively, where N is an integer. N mass flow controllers are connected to the N primary valves, respectively, to flow N gases from the N gas sources, respectively. N secondary valves selectively flow gas from the N mass flow controllers, respectively. A gas flow path connects the N secondary valves to a flow metrology system located remote from the N secondary valves, wherein the gas flow path includes a plurality of gas lines. A controller is configured to perform a hybrid flow metrology by selectively using a first flow metrology and a second flow metrology that is different from the first flow metrology to determine an actual flow rate for a selected gas at a desired flow rate from one of the N mass flow controllers.

Hybrid flow metrology for improved chamber matching

Methods and apparatus for supplying gas in a plasma processing system that employs the single line drop approach wherein a regulator is shared among multiple mass flow controllers. In one or more embodiments, an accumulator is provided and coupled in gaseous communication with a shared manifold to reduce pressure spikes and dips. A filter, which may be replaceable or non-replaceable separate from the accumulator, is integrated with the accumulator in one or more embodiments.

Methods and apparatus for supplying process gas in a plasma processing system

A method of calculating a transient flow rate of a flowed process gas comprises flowing process gas through a mass flow controller into a chamber of known volume and measuring successive data sample points which include pressure data, temperature data, and a time value for each successive data sample point. Groups of successive data sample points are identified wherein each group shares one or more successive data sample points with another group, and ratio values are calculated for each of the successive data sample points wherein each ratio value is a ratio between the pressure data and a product of temperature and gas compressibility data for each respective time value. A line of best fit of the ratio values is determined within at least one group, and then the transient flow rate of the flowed process gas is calculated using a pressure rate of rise technique wherein the pressure rate of rise technique utilizes a ratio value determined from the line of best fit for at least one time value within the at least one group.

Metrology method for transient gas flow

A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

Systems and methods for providing gases to a process chamber

Ultrasonic cleaning apparatuses and methods of cleaning substantially planar articles. An apparatus comprises (i) a substantially circular tank; (ii) a plurality of cleaning fluid inlets for delivering a cleaning fluid to the tank; (iii) an intermediate support for receiving an article to be cleaned; and (iv) an ultrasonic generator coupled to the tank for generating ultrasonic waves in the tank and cleaning fluid received therein. The apparatus is configured to remove particles from a substantially planar article and have them carried by flow of cleaning fluid away from the article and out of the tank. Using such an apparatus, a cleaning method comprises introducing a substantially planar article to be cleaned into the tank; introducing a cleaning fluid into the tank through the plurality of cleaning fluid inlets; and exciting the cleaning fluid with ultrasonic waves.

Ultrasonic cleaning method and apparatus therefore

A gas supply subsystem for providing a set of process gases to a substrate processing chamber, the set of process gases being a subset of a plurality of process gases available to the substrate processing chamber. The gas supply subsystem has fewer multi-gas mass flow controllers than the number of available process gases, wherein multiple process gases are multiplexed at the input of one or more of the multi-gas mass flow controllers. Pump-purge may be employed to improve gas switching speed for the multi-gas mass flow controllers.

Gas supply systems for substrate processing chambers and methods therefor

Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.

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San Jose, CA, United States of America

Evangelos T Spyropoulos