Novellus Systems Incorporated

Other

Tektronix, Inc.

International Business Machines Corporation

Evan E Patton

Jonathan David Reid

Steven T Mayer

Robert J Contolini

Eliot K Broadbent

Wayne Fetters

Dinesh S Kalakkad

Seshasayee Varadarajan

Robert L Jackson

Edward C Opocensky

Theodore Cacouris

David Charles Smith

Gary B Lind

John Owen Dukovic

Steve Taatjes

Steven W Taatjes

Jingbin Feng

R Marshall Stowell

Richard S Hill

Jeffrey Alan Hawkins

Tadanori Yamaguchi

Vijay Bhaskaran

Won Lee

Panayotis Constantinou Andricacos

Thomas Anand Ponnuswamy

Erick G Walton

Richard N Hill

Peter Stevens Locke

James Edward Fluegel

Brian Paul Blackman

Jeff Hawkins

Alan R Popiolkowski

Jon Reid

William E Corbin, Jr

Alain Harrus

Carol A Hacherl

Yeou-Chong S Yu

Eric Lane

Simon Yu

Percival Verdeflor

Harold D Perry

Carl Russo

Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Sequential station tool for wet processing of semiconductor wafers

Adjustable chemical vapor deposition showerhead assembly

Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.

Process for electroplating metals into microscopic recessed features

Liquid detection sensors are attached to both sides of a robotic arm end effector of a semiconductor wafer process system. The sensor mechanism or probe is situated on the front side and backside of the end effector, designed with electrical lines that are traced onto a polyester base material. The electrical lines are positioned in a serpentine formation. The high conductance of the sulfuric acid in the copper sulfate solution acts as the conductor between the traced lines. When the conductive liquid comes in contact with the traced lines, the lines short and the sensor activates or turns on.

Sensor for measuring liquid contaminants in a semiconductor wafer fabrication process

The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Methods and apparatus for controlled-angle wafer positioning

Liquid detection end effector sensor and method of using the same

Certain mechanisms of a plating apparatus address problems associated with interaction between plating solutions or other processing solutions and the components of the plating apparatus (such as the electrical contacts). For example, a circumferential spray skirt around the interface of a 'cup' and 'cone' in the plating apparatus protects these features during plating. A shield mechanism contacts the cup and/or cone at the periphery of their interface to provide a fluid resistant seal. In some cases, the cone includes an outer circumferential lip that engages a complementary surface of the cup for this purpose. Further, a mechanism is provided for raising and lowering the work piece with the cone in order to allow in situ rinsing of the work piece and/or regions of the cup.

Clamshell apparatus with crystal shielding and in-situ rinse-dry

The present invention provides apparatus and methods for controlling flow dynamics of a plating fluid during a plating process. The invention achieves this fluid control through use of a diffuser membrane. Plating fluid is pumped through the membrane; the design and characteristics of the membrane provide a uniform flow pattern to the plating fluid exiting the membrane. Thus a work piece, upon which a metal or other conductive material is to be deposited, is exposed to a uniform flow of plating fluid.

Methods and apparatus for controlling electrolyte flow for uniform plating

Process for electroplating metal into microscopic recessed features

An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.

Copper electroplating method and apparatus

An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a &ldquo;snorkel&rdquo; shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.

Clamshell apparatus for electrochemically treating wafers

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Portland, OR, United States of America

Evan E Patton