Samsung Electronics Co., Ltd.

Sungkyunkwan University

Eunsung Kim

Shiyong Yi

Jeong Ju Park

Chulho Shin

Shigenobu Maeda

Hyunwoo Kim

Jaewoo Nam

Hyeonjin Shin

Seongjun Park

Joonsoo Park

SoonMok Ha

Dae-Yong Kang

Kyoungseon Kim

Han Geun Yu

Kyeongmi Lee

Seungchul Kwon

Byungjun Jeon

Sungwng Kim

Jaeyeol Hwang

A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

Method of fabricating pattern structure

A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

Methods of forming fine patterns

A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

Thermoelectric structure, thermoelectric device and method of manufacturing the same

Methods of fabricating a semiconductor device are provided. The methods may include forming a stopper layer on a target layer including a cell area and an edge area, forming a hard mask including first upper openings and dam trench on the stopper layer, forming opening spacers on inner walls of the first upper openings and a dam pattern in the dam trench, removing the stopper layer exposed in the first upper openings to form first lower openings, forming pillar patterns in the first lower openings and the first upper openings and an eaves pattern on the dam pattern, removing the hard mask in the cell area, forming a first polymer block between the pillar patterns including second upper openings, etching the stopper layer exposed in the second upper openings to form second lower openings, and removing the first polymer block, the pillar patterns, the dam pattern and the eaves pattern.

Methods of forming semiconductor devices including contact holes

The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.

Methods of forming a pattern and devices formed by the same

A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.

Photolithography method including dual development process

A method of fabricating a semiconductor device may include forming spacer line patterns on sidewalls of photoresist. A planarization etching process may be performed on a subsequently added planarization layer, after forming a mesh-shaped mask pattern from the spacer line patterns.

Method of manufacturing a semiconductor device

Growing community of inventors

Seoul, South Korea

Eunsung Kim