Tokyo Electron Limited

Eundo Bae

Kazuya Kato

Wakako Ishida

Eisuke Numazawa

Inho Jang

Yasunori Hatamura

A substrate cleaning method includes: providing a substrate including a low-k layer containing silicon to a substrate support; etching the low-k layer by a plasma generated from a first gas; separating the etched substrate from the substrate support; and removing a reaction product attached to the substrate in the etching by a plasma generated from a second gas. The second gas includes a first carbon-containing gas represented by CHF(y≥0, x/z>¼).

Growing community of inventors

Hwaseong-si, South Korea

Eundo Bae