Samsung Electronics Co., Ltd.

Dnf Co., Ltd.

Eun Hyea Ko

Youn Joung Cho

Gyu-Hee Park

Joong Jin Park

Byeong Il Yang

Hee Yeon Jeong

Hyun-ji Song

Jun Hee Cho

Jeong Ho Mun

Jae Woon Kim

Byung Keun Hwang

Ji Yu Choi

A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

Semiconductor device manufacturing method

An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C-Calkyl group, and N is nitrogen.

Atomic layer etching method and semiconductor device manufacturing method using the same

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Suwon-si, South Korea

Eun Hyea Ko