Samsung Electronics Co., Ltd.

Dnf Co., Ltd.

Eun Hyea Ko

Gyu-Hee Park

Joong Jin Park

Youn Joung Cho

Byeong Il Yang

Hee Yeon Jeong

Jun Hee Cho

Ji Yu Choi

An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C-Calkyl group, and N is nitrogen.

Atomic layer etching method and semiconductor device manufacturing method using the same

Growing community of inventors

Suwon-si, South Korea

Eun Hyea Ko