Rohm and Haas Electronic Materials Korea Ltd.

Rohm & Haas Electronic Materials LLC

Eui Hyun Ryu

Jung-June Lee

Jae Hwan Sim

Chang-Young Hong

Dong-Yong Kim

Min-Kyung Jang

Myung-Yeol Kim

Min Kyung Jang

Myung Yeol Kim

Woo-Hyung Lee

Jin Hong Park

Hye-Won Lee

Matthew Lee Grandbois

Jae-Bong Lim

Hyun Bae Jeon

Jung Kyu Jo

Hae-Jin Lim

Jung Woo Kim

Jae Yun Ahn

Ohk-Min Jeon

Kwang-Mo Choi

Eunhye Cho

Haemi Jeong

Kwang-Hwyi Im

Dong Je Hong

Monomers and polymers are provided that comprise a carbon alicyclic group or heteroalicyclic group that comprises 1) one or more acid-labile ring substituents and 2) one or more ether or thioether ring substituents. Photoresists that comprise such polymers also are provided.

Monomers, polymers and photoresist compositions

In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

Coating compositions for use with an overcoated photoresist

Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Overcoat compositions and methods for photolithography

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I): 

Coating composition for use with an overcoated photoresist

New photobase generators suitable for use in photoresists are provided that correspond to Formula (I):X&#x2014;R&#x2014;O&#x2014;C(&#x2550;O)N(R)R&#x2003;&#x2003;(I)wherein Xis an optionally substituted aromatic group; Ris a linker; and Rand Rare the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of Rand Ris an optionally substituted branched alkyl group having 4 or more carbon atoms.

Photobase generators and photoresist compositions comprising same

Growing community of inventors

Chungcheongnam-do, South Korea

Eui Hyun Ryu