Infineon Technologies Ag

Qimonda Ag

Infineon Technologies LLC

Eugen Unger

Maik Liebau

Georg Duesberg

Gernot Steinlesberger

Georg Stefan Dusberg

Manfred Engelhardt

Franz Kreupl

Zvonimir Gabric

Thomas Peter Haneder

Werner Pamler

Guenther Schindler

Harald Bachhofer

Andrew Graham

Andreas Stich

Martin Traving

One embodiment of the present invention provides a method for the deposition of a Carbon containing layer on a Silicon surface wherein a (i) substantially Silicon-oxide-free or reduced oxide interface results between Silicon and the Carbon containing layer during the deposition. In another embodiment, the present invention provides a method for deposition of a Carbon containing layer wherein the deposition process is substantially soot (particle)-free or reduction of soot.

Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers

In a method for manufacturing a layer arrangement, a plurality of electrically conductive structures are embedded in a substrate. Material of the substrate is removed at least between adjacent electrically conductive structures. An interlayer is formed on at least one portion of sidewalls of each of the electrically conductive structures. A first layer is formed on the interlayer where an upper partial region of the interlayer remaining free of a covering with the first layer. An electrically insulating second layer is formed selectively on that partial region of the interlayer which is free of the first layer, in such a way that the electrically insulating second layer bridges adjacent electrically conductive structures such that air gaps are formed between adjacent electrically conductive structures.

Method for manufacturing a layer arrangement and layer arrangement

A process for silanizing carbon nanotubes, wherein the carbon nanotubes are oxidized and subsequently exposed to a saturated gas phase including one or more organosilane derivatives which form covalent bonds to the carbon nanotubes with siloxane formation.

Silanized carbon nanotubes and method for the production thereof

A process for producing a nanoelement arrangement and to a nanoelement arrangement. A first nanoelement is at least partially covered with catalyst material for catalyzing the growth of nanoelements. Furthermore, at least one second nanoelement is grown on the catalyst material. Also, a nanoelement arrangement having a first nanoelement on which at least one predetermined region is covered with catalyst material for catalyzing the growth of nanoelements, and at least one second nanoelement grown on the catalyst material.

Process for producing a nanoelement arrangement, and nanoelement arrangement

A method of forming an ultrathin homogenous metal layer that serves as base metallization for formation of contact locations and/or contact pads and/or wirings of an integrated electronic component. The method includes the steps of depositing a first metal layer on a substrate at least in regions, and producing a second metal layer on the first metal layer at least in regions, component(s) of the second metal layer have a more positive redox potential than component(s) of the first metal layer, wherein ultrathin homogenous deposition of the second metal layer is effected by wet-chemical, current-free, electrochemical redox processes by element exchange from one or more metal salts as oxidant with at least a top metal atomic layer of the first metal layer as reductant.

Process for producing ultrathin homogenous metal layers

A method for targeted deposition of a nanotube on a planar surface includes providing a ram made from elastomeric material and having a relief structure on its surface. A microfluid capillary system, with an inlet and an outlet, is then formed by applying the ram to a planar substrate. A dispersion of nanotubes is brought into contact with the inlet, thereby enabling capillary force to disperse the nanotubes. through the microfluid capillary system. The resulting dispersion of nanotubes is then dried and the ram removed.

Targeted deposition of nanotubes

A method of inferring the existence of light by means of a measurement of the electrical characteristics of a nanotube bound to a dye first of all involves bringing a nanotube derivatized with a dye into contact with two conductor tracks. An electrical parameter of the nanotube is then measured via the two conductor tracks without exposure to light. Then the dye bound to the nanotube is irradiated, and the electrical parameter of the nanotube is then measured via the two conductor tracks with exposure to light. The difference between the value of the electrical parameter measured without exposure to light and the corresponding parameter measured with exposure to light is then established. Finally it is inferred, as a function of the difference established, whether light is present.

Method of inferring the existence of light by means of a measurement of the electrical characteristics of a nanotube bound with a dye, and detection arrangement

In a ferroelectric transistor containing two source/drain zones with a channel region disposed there-between, a first dielectric intermediate layer containing Al O is disposed on a surface of the channel region. A ferroelectric layer and a gate electrode are disposed above the first dielectric intermediate layer. The utilization of Al O in the first dielectric intermediate layer results in the suppression of tunneling of compensation charges from the channel region into the first dielectric layer and thereby improves the time for data storage.

Growing community of inventors

Augsburg, Germany

Eugen Unger