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Infineon Technologies Ag

Ims-ionen Mikrofabrikations Systeme Gmbh

Ernst Haugeneder

Albrecht Ehrmann

Frank-Michael Kamm

Reinhard Springer

Florian Letzkus

Alfred Chalupka

Hans L&ouml;schner

J&ouml;rg Butschke

Alexander Petraschenko

Stefan Schunck

Joerg Butschke

In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.

Large-area membrane mask and method for fabricating the mask

A method for producing a perforated mask for particle radiation includes calculating values of an elasticity of adjacent cells of a mask with respect to longitudinal and shear stresses in a main plane of the mask on a model of the desired pattern of mask openings. For the respective individual cells, length and direction of all the edge sections of the openings and cross-sectional areas of the openings are determined. Therefrom, statistical parameters are derived, which are used as a variable in preselected empirical functions to determine the elasticity values of the cells analytically. By linking the elasticity values determined with deformation forces to be expected, the vector field of a distortion of the mask to be expected is calculated by FE calculation. For cutting the mask openings into a blank, a pattern is selected that represents the desired pattern with a distortion being the inverse of the previously calculated distortion.

Method of producing a perforated mask for particle radiation

The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.

Method for fabricating positionally exact surface-wide membrane masks

For producing an exposure pattern on a resist material layer on a substrate, a mask having a pattern of transparent structures is illuminated with a beam of energetic radiation and the structure pattern is imaged onto the substrate by means of the structured beam within a pattern transfer system such as an ion-beam lithography system. The pattern image produced on the substrate is shifted laterally with respect to the substrate between a plurality of predetermined shift positions and with each shift position the substrate is irradiated for a predetermined time, wherein the width of lateral displacements is smaller than the minimum feature size of the exposure pattern, the blur as determined by the pattern transfer system is not smaller than the width of lateral displacements, and the dimension and/or direction of the structure patterns are incongruent with respect to the lateral displacements. Thus on the substrate, the exposures superpose into a spatial distribution of exposure dose which exceeds the specific minimum exposure dose of the resist material only within the desired regions of the exposure pattern.

Lithographic method for producing an exposure pattern on a substrate

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Vienna, Austria

Ernst Haugeneder