Asm International N.v.

Nobel Biocare Services, Ag

Asm Microchemistry Oy

Ernst H Granneman

Ivo Johannes Raaijmakers

Kai-Erik Elers

Boudewijn G Sluijk

Hans W Piekaar

Suvi P Haukka

Pekka T Soininen

Marko J Tuominen

Herbert Terhorst

Vladimir Ivanovich Kuznetsov

Juhana Kostamo

Wei-Min Li

Ville Antero Saanila

Hessel Sprey

Menso Hendriks

Laurens F Kwakman

Hubertus A Corsius

Ruud Grisel

Olli Kilpela

A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

Temperature control for single substrate semiconductor processing reactor

Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

Atomic layer deposition reactor

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.

Sealing porous structures

Method for producing a flow of triisobutylaluminum from liquid

Method and apparatus for depositing a layer on a substrate

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Hilversum, Netherlands

Ernst H Granneman