International Business Machines Corporation

Erik A Puttlitz

Wayne Martin Moreau

Leo L Linehan

James Thomas Fahey

Gary T Spinillo

Arthur C Winslow

William John Adair

Randolph J Smith

James J Colelli

James Patrick Collins

Laird Chandler MacDowell

Judy B Dorn

Timothy J Toth

William J Miller

A method for the controlled aging of a photoresist which provides an aged photoresist that has a targeted photospeed which is faster than a conventional unaged photoresist is provided. Specifically, the inventive method includes the step of aging a solution containing at least a photoresist resin composition at a temperature below the thermal decomposition of the photoresist resin composition, but not below 20&deg; C., for a time period that is effective in achieving a targeted photospeed which is faster than a photospeed of an unaged photoresist.

Controlled aging of photoresists for faster photospeed

Mask with attenuating phase-shift and opaque regions

Microbridge formation in chemically amplified negative tone photoresists based on poly(hydroxystyrene) (PHS) is avoided when the PHS is blended together with a co-polymer of PHS and an acrylic polymer such as poly(methyl methacrylate) (PMMA). The blend should include at least 10% by weight of the co-polymer. In operation, hydrogen bonding between the hydroxystyrene sub-units and the methacrylate sub-units decreases the availability of sites for crosslinking, and this reduction in crosslinking sites makes the blend less susceptible to formation of polymer resist microbridges. The invention is practicable with a polymers having a wide range of molecular weights (2000-50000 daltons), and development can be achieved using the industry standard 2.38 wt % trimethylammonium hydroxide (TMAH) developer without any adverse impact on the photoresist.

Composition for eliminating microbridging in chemically amplified

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Colchester, VT, United States of America

Erik A Puttlitz