Siltronic Ag

Erich Daub

Wilfried Von Ammon

Reinhold Wahlich

Timo Mueller

Friedrich Passek

Peter Krottenthaler

Christoph Frey

Hans Oelkrug

Arnold Kuehhorn

Klaus Messmann

Rüdiger Schmolke

Thomas Loch

Raimund Kaiss

Oliver Schmelmer

Michael Kloesler

Johannes Studener

A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Support ring for supporting a semiconductor wafer composed of monocrystalline silicon during a thermal treatment, method for the thermal treatment of such a semiconductor wafer, and thermally treated semiconductor wafer composed of monocrystalline silicon

An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the &#x3c;110&#x3e; direction of the single silicon crystal is tilted away by the angle &#x3b8; from the normal to the wafer surface and the projection of the tilted &#x3c;110&#x3e; direction forms an angle &#x3c6; with the direction &#x3c;&#x2212;110&#x3e; in the wafer, and &#x3b8; is given by 0&#x2266;&#x3b8;&#x2266;3&#xb0; and 45&#xb0;&#x2266;&#x3c6;&#x2266;90&#xb0;, as well as for all symmetrically equivalent directions.

Epitaxially coated silicon wafer with 110 orientation and method for producing it

A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1&#xb7;10-8&#xb7;10atoms/cm, an oxygen concentration of 5.2&#xb7;10-7.5&#xb7;10atoms/cm, a central thickness BMD density of 3&#xb7;10-2&#xb7;10cm, a cumulative length of linear slippages &#x2266;3 cm and a cumulative area of areal slippage regions &#x2266;7 cm, the front surface having &#x3c;45 nitrogen-induced defects of &#x3e;0.13 &#x3bc;m LSE in the DNN channel, a layer at least 5 &#x3bc;m thick, in which &#x2266;1&#xb7;10COPs/cmwith a size of &#x2267;0.09 &#x3bc;m occur, and a BMD-free layer &#x2267;5 &#x3bc;m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Silicon wafer and process for the heat treatment of a silicon wafer

A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*10atcmand greater than 1*10atcm. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

Semiconductor wafer made from silicon and method for producing the semiconductor wafer

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Emmerting, Germany

Erich Daub