International Business Machines Corporation

Applied Materials, Inc.

Eric Peter Solecky

Charles Neill Archie

Lin Zhou

George W Banke, Jr

Georgios A Vakas

Ravikumar Ramachandran

Renee Tong Mo

Stuart A Sieg

Bachir Dirahoui

Donald C Wheeler

Marc J Postiglione

Kourosh Nafisi

Alexander L Martin

Stephen W Goodrich

Erwin E Weissmann

Javier Ayala

Ejaj Ahmed

Sarah A Kay

Darryl D Restaino

Steven Robert Rogers

Rebecca D Mih

Roger M Young

Dmitriy Shneyder

Mark E Lagus

Andrew C Brendler

Anastasios A Katsetos

Jonathan Levy

Christopher E Pepe

Timothy L Holmes

Diana Nyyssonen, Deceased

William K Hoffman, Jr

By Jeffrey Swing, Legal Representative

A method for managing a metrology system includes receiving a part, identifying, with a processing device, a part type associated with the part, retrieving, with the processing device, test rule logic associated with the part type from a database, retrieving, with the processing device, measurement data associated with the identified part type, processing, with the processing device, the measurement data, applying, with the processing device, the test rule logic to the processed measurement data to determine whether the part should be measured, outputting the part responsive to determining that the part should not be measured, and incrementing, with the processing device, a counter and saving a value of the counter in the database responsive to outputting the part responsive to determining that the part should not be measured.

Metrology management

A method for measuring a dimension of a device includes receiving an image of a portion of the device, receiving a first offset value and a second offset value, processing the image to define a least one graph of a line of pixels, the at least one graph including the brightness level of each pixel in a line of pixels, identifying a location of a first peak and a second peak in the graph, defining a first exclusion area boundary, defining a second exclusion area boundary, setting the brightness level of the pixels between the first exclusion area boundary and the second exclusion area boundary to zero, identifying a first portion of the feature of interest and a second portion of the feature of interest, and measuring a distance between the first portion of the feature of interest and the second portion of the feature of interest.

Methods and systems involving measuring complex dimensions of silicon devices

A method for monitoring a fleet comprising a plurality of measurement tools includes collecting data for a current time interval from the fleet by a data collection module; and performing fleet measurement precision (FMP)/tool matching precision (TMP) analysis on the collected data by a FMP/TMP analysis module, wherein FMP/TMP analysis comprises determining a TMP for each of the plurality of measurement tools using a static and a dynamic benchmark measuring system (BMS); and determining a FMP for the fleet using the static and the dynamic BMS; and determining if the FMP is above a predetermined threshold by a fleet improvement module, and in the event the FMP is above the predetermined threshold, identifying at least one tool of the plurality of tools as poorly performing based on the TMPs; and flagging the identified at least one tool for improvement.

Measurement tool monitoring using fleet measurement precision and tool matching precision analysis

A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small.

SEM repair for sub-optimal features

A system and method for optimizing and implementing a metrology sampling plan. A system is provided that includes a system for collecting historical metrology data from a metrology tool; and a reduction analysis system that compares an initial capability calculated from the historical metrology data with a recalculated capability for a reduced data set, wherein the reduced data set is obtained by removing a subset of data from the historical metrology data.

Automated dynamic metrology sampling system and method for process control

A test method for measuring adsorbed molecular contamination uses a test structure that includes a substrate comprising a plurality of separated test sites having a plurality separate thicknesses having a base design thickness and a designed thickness interrelationship. The test structure is exposed to a molecular contaminant environment to provide an adsorbed molecular contaminant layer upon each of the plurality of separated test sites. The plurality of separated test sites with the adsorbed molecular contaminant layer thereon is measured. An appropriate algorithm that considers the designed thickness interrelationship is used to determine at least one of: (1) the base design thickness; and (2) a thickness of the adsorbed molecular contaminant layer.

Quantification of adsorbed molecular contaminant using thin film measurement

A method of preparing recipes of operating a metrology tool, wherein each recipe includes a set of instructions for measuring at least one dimension in a microelectronic feature. There is provided a desired recipe having instructions for measuring one or more desired dimensions, the desired recipe or portion thereof including a summary of parameters relating to metrology tool function with respect to the microelectronic feature dimension to be measured. The method includes comparing the instructions in the desired recipe with the instructions in a database, identifying differences between the instructions in the desired recipe and the instructions in the database, modifying the instructions in the desired recipe to conform to the instructions in the database, verifying the desired recipe prior to using the modified desired recipe by the metrology tool, and using the desired recipe to execute a microelectronic feature measurement on the metrology tool.

Metrology tool recipe validator using best known methods

A method for reducing edge effect interference with critical dimension (CD) measurement of semiconductor via structures includes forming a test structure in a kerf region of a semiconductor wafer, the test structure including at least a via structure and a trench structure in contact with the via structure. The via structure is formed in accordance with a critical dimension associated with a corresponding via structure in a circuit region of the semiconductor wafer, and the trench structure is formed in accordance with a widened dimension with respect to a minimum ground rule dimension associated with a corresponding trench structure in a circuit region of the semiconductor wafer.

Structure for reducing prior level edge interference with critical dimension measurement

Method and structure for reducing prior level edge interference with critical dimension measurement

A method, system and program product are disclosed for optimizing a fleet of measurement systems. One embodiment determines a tool matching precision (TMP) and a fleet measurement precision (FMP) and normalizes these metrics across applications. An optimization is carried out in which usage weighting factors are assigned to each measurement system while enforcing usage enforcement rule(s) to ensure that each measurement system is optimally used and each application is adequately covered. The optimization re-assigns usage weighting factors to minimize a normalized FMP metric and enforce the usage enforcement rule(s).

Measurement system fleet optimization

Methods, systems and program products are disclosed for determining whether a measurement system under test (MSUT) matches a fleet including at least one other measurement system. The invention implements realistic parameters for analyzing a matching problem including single tool precision, tool-to-tool non-linearities and tool-to-tool offsets. A bottom-line tool matching precision metric that combines these parameters into a single value is then implemented. The invention also includes methods for determining a root cause issue of a matching problem, and for determining a fleet measurement precision metric. Method, system and program product are also disclosed for attempting to determine a root cause of a subject problem related to at least one of a measurement system under test (MSUT) and a fleet of at least one other measurement system.

Determining root cause of matching problem and/or fleet measurement precision problem for measurement system

A charged beam apparatus, such as an electron microscopy apparatus, and a method for determining an aerial dimensional map of a charged beam within the charged beam apparatus, each use a test structure that includes a feature located upon a substrate. One of the feature and the substrate is conductive and the other of the feature and the structure is non conductive. The charged beam within the charged beam apparatus is scanned in a plurality of non-parallel linear directions with respect to the substrate and the feature to provide a corresponding plurality of current versus position response curves from which may be determined the aerial dimensional map of the charged beam within the charged beam apparatus.

Charged beam apparatus and method that provide charged beam aerial dimensional map

A structure, a system and a method are directed towards determination of a dimension of a patterned dimensionally unstable layer when the dimension is measured using an apparatus that induces a variation of the dimension. The structure, system and method use a patterned dimensionally unstable layer pattern design that correlates with an algorithm used to determine the dimension when the dimension is measured using the apparatus that induces the variation of the dimension.

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Hyde Park, NY, United States of America

Eric Peter Solecky