Applied Materials, Inc.

Eric Davey

Fred Conrad Redeker

Benjamin Colombeau

Robert D Tolles

Jay Gurusamy

Gregory E Menk

You Wang

Ekaterina A Mikhaylichenko

Veera Raghava Reddy Kakireddy

Myungsun Kim

Michael Anthony Stolfi

Andy Lo

Huyen Karen Tran

Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.

Formation of gate all around device

A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. In some implementations of the present disclosure, the advanced polishing article comprises a polymeric sheet having a polishing surface with a raised surface texture or 'micro-features' and/or a plurality of grooves or 'macro-features' formed in the polishing surface. In some implementations, the raised surface texture is embossed, etched, machined or otherwise formed in the polishing surface prior to installing and using the advanced polishing article in a polishing system. In one implementation, the raised features have a height within one order of magnitude of the features removed from the substrate during polishing.

Thin plastic polishing article for CMP applications

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Mountain View, CA, United States of America

Eric Davey