Entegris, Inc.

Eric Condo

Thomas H Baum

Bryan Clark Hendrix

Philip S H Chen

David Kuiper

Han Wang

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing Oand NHco-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Vapor deposition precursor compounds and process of use

Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI) or disilicon hexaiodide (SiI) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

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Shelton, CT, United States of America

Eric Condo