Kla-tencor Technologies Corporation

Eric Bouche

Gary Janik

Jianou Shi

Shiyou Pei

Sergio Edelstein

Xiafang Zhang

John Fielden

A metrology recipe includes dynamic instructions that allow a metrology tool to perform a secondary metrology operation on a test wafer when previous measurement data indicates a process issue with that test wafer. The metrology recipe can instruct the metrology tool to perform an efficient default metrology operation on all test wafers, and perform a more in-depth secondary metrology operation on only those wafers that warrant additional scrutiny. In this manner, critical metrology data can be captured with a minimum of effect on metrology throughput. The metrology data used to determine whether or not the secondary metrology operation is to be performed can be generated from default metrology operations within the same tool, or can be generated by measurements taken by a completely different tool. Such 'external' metrology data can be received via a communications network, either directly or from a server on the network for processing the metrology data.

Dynamic measurement control

A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

Corona based charge voltage measurement

A method for measuring three-dimensional gate dielectric structures can involve forming test patterns that cover a range of dimensional values for the fins on which the gate dielectric structures are formed. Then, by measuring the gate dielectric properties and then correlating those measurements with the underlying fin dimensions, a relationship between fin dimension(s) and gate dielectric properties can be determined. That relationship can then be applied to actual device structures to interpolate/extrapolate gate dielectric property values based on the fin dimensions in the actual device.

Growing community of inventors

Pleasanton, CA, United States of America

Eric Bouche