Yangtze Memory Technologies Co., Ltd.

Er Jiang Xu

Meng Wang

Haihui Huang

Zhen Fang

A method for reducing an epitaxial growth loading effect in a patterned device includes forming a first trench and a second trench in a substrate and in a first insulating layer over the substrate to form a low pattern density region and a high pattern density region. The first trench has a larger cross-sectional area than the second trench. The method further includes isolating the first trench from the second trench by using a first mask. The method further include disposing a second insulating layer in the first trench. The method further includes removing a portion of the first mask in order to expose the second trench. The method further includes growing an epitaxial layer in the second trench.

Methods for solving epitaxial growth loading effect at different pattern density regions

The present disclosure describes methods and patterned devices for reducing a loading effect between a low pattern density region and a high pattern density region. The patterned device includes a substrate, a first insulating layer over the substrate, a low pattern density region, a high pattern density region, a second insulating layer, and an epitaxial grown layer. The low pattern density region includes a first trench in the first insulating layer and the substrate. The high pattern density region includes a second trench in the first insulating layer and the substrate. The second insulating layer is formed in the first trench. The epitaxial grown layer is formed in the second trench. The first trench has a larger cross-sectional area than the second trench.

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Hubei, China

Er Jiang Xu