Micron Technology Incorporated

Stmicroelectronics S.r.l.

Enrico Bellandi

Carla Maria Lazzari

Simone Alba

Francesco Maria Pipia

Mauro Alessandri

Francesca Canali

Claudio Savoia

A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.

Arrays of silicon structures including metal silicide regions, and related semiconductor device structures

Methods of forming a metal silicide region on at least one silicon structure

The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).

Process for removing polymers during the fabrication of semiconductor devices

Method of measuring the thickness of a layer of silicon damaged by plasma etching

Growing community of inventors

Agrate Brianza, Italy

Enrico Bellandi