Intel Corporation

Ender Hokelek

Mark A Holler

Been-Jon K Woo

Sandra S Lee

A method of forming complementary metal oxide semiconductor field-effect transistors (CMOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effects, to increase punch through voltage and to increase gate-aided breakdown voltage.

Source drain doping technique

A method of forming metal oxide semiconductor field-effect transistors (MOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effect, to increase punch through voltage and to increase gate-aided breakdown voltage.

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Santa Clara, CA, United States of America

Ender Hokelek