Taiwan Semiconductor Manufacturing Comp. Ltd.

En-Chan Chen

Chen Hsiung Yang

Chun-Wen Cheng

Chia-Hua Chu

Chun-wen Cheng

Chia-hua Chu

A MEMS device includes a first multi-layer structure, a second multi-layer structure over the first multi-layer structure, a first semiconductor layer between the first and second multilayer structures, a first air gap separating the first multi-layer structure and the first semiconductor layer, a second air gap separating the first semiconductor layer and the second multi-layer structure, a plurality of semiconductor pillars, and a plurality of second semiconductor pillars. The first semiconductor pillars are exposed to the first air gap, and coupled to the first semiconductor layer and the first multi-layer structure. The second semiconductor pillars are exposed to the second air gap, and coupled to the first semiconductor layer and the second multi-layer structure.

Microelectromechanical system device

A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.

Method for forming semiconductor device

A micro electro mechanical system (MEMS) microphone includes a first membrane, a second membrane, a third membrane disposed between the first membrane and the second membrane, a first cavity disposed between the first membrane and the third membrane and surrounded by a first wall, a second cavity disposed between the second membrane and the third membrane and surrounded by a second wall, and one or more first supports disposed in the first cavity and connecting the first membrane and the third membrane.

Sensor device and manufacturing method thereof

A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.

Growing community of inventors

Hsinchu, Taiwan

En-Chan Chen