International Business Machines Corporation

Imec Vzw

Katholieke Universiteit Leuven, Ku Leuven R&d

Imec USA Nanoelectronics Design Center

Emily Gallagher

Cedric Huyghebaert

Ivan Pollentier

Marina Yurievna Timmermans

Louis M Kindt

Gregory R McIntyre

James Albert Slinkman

Alfred Wagner

Hanns Christoph Adelmann

Jae Uk Lee

Joern-Holger Franke

Marina Mariano Juste

Jed Hickory Rankin

Alan Edward Rosenbluth

Michael James Lercel

Andrew J Watts

Roel Gronheid

Kenneth Christopher Racette

Karen D Badger

Richard E Wistrom

Jan Doise

Rik Jonckheere

Carey W Thiel

Richard E Wistron

Rogert K Leidy

Iacopo Mochi

Elie Schapmans

Christoper Magg

According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.

Method for forming an extreme ultraviolet lithography pellicle

The present disclosure relates to an extreme ultraviolet lithography, EUVL, device comprising: a reticle comprising a lithographic pattern to be imaged on a target wafer; a light-transmissive pellicle membrane mounted in front of, and parallel to, the reticle, wherein the pellicle membrane scatters transmitted light along a scattering axis; and an extreme ultraviolet, EUV, illumination system configured to illuminate the reticle through the pellicle membrane, wherein an illumination distribution provided by the EUV illumination system is asymmetric as seen in a source-pupil plane of the EUV illumination system; wherein light reflected by the reticle and then transmitted through the pellicle membrane comprises a non-scattered fraction and a scattered fraction formed by light scattered by the pellicle membrane; the EUVL device further comprising: an imaging system having an acceptance cone configured to capture a portion of the light reflected by the reticle and then transmitted through the pellicle membrane.

Extreme ultraviolet lithography device

The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.

Lithography scanner

A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.

Induced stress for EUV pellicle tensioning

The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

Method for forming a pellicle

A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

Method for manufacturing a mask

The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.

Method for forming a carbon nanotube pellicle membrane

The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.

Lithographic reticle system

Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.

Extreme ultraviolet (EUV) multilayer defect compensation and EUV masks

A method and system arrangement for controlling and determining mask operation activities. Upon obtaining chip physical layout design data and running resolution enhancement technology on the chip physical layout design to generate mask features which may include any sub-resolution assist features, a placement sensitivity metric is determined for each of the generated mask features or edge fragments. In one alternative embodiment an edge placement sensitivity metric is determined for each edge of the generated mask features or edge fragments. The determined sensitivity metrics for each feature are classified and applied to subsequent mask operational activities such as post processing, write exposure and mask repair. The types of decisions based on the sensitivity metric may include minimizing or maximizing OPC processing; e-beam exposure adjustment in mask write; and selection of which mask features to repair as well as what repair criteria to then apply, and adjusting quality requirement criteria for manufacturing assessment.

Method for determining mask operation activities

Extreme ultraviolet lithography (EUVL) masks and methods of manufacturing are provided. A method includes forming a sub-resolution phase shift grating in a multilayer reflective film beneath a border region of an absorber layer of an extreme ultraviolet lithography (EUVL) mask. The sub-resolution phase shift grating reduces a reflectivity of the border region of the mask.

Reducing edge die reflectivity in extreme ultraviolet lithography

A method for characterizing the resolution of mask inspection tool using a test mask and a database containing defect data. A variety of defect types and sizes is programmed into the database, and the database is then used to inspect the defect-free mask. All defects programmed into the database are not captured in performing the method, so the resolution capability of an inspection tool can be determined.

Mask program defect test

A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature, and the pellicle frame is mounted to the mask at the mounting temperature.

Method for adjusting lithographic mask flatness using thermally induced pellicle stress

An apparatus for and method of storing and transporting a photomask. A photomask storage container has fluid-tight walls, an opening for moving the photomask into and out of the container, and a sealable inlet for a storage fluid. The method includes placing the photomask in the storage container through the opening, introducing a storage fluid into the container through the inlet, closing the container opening and sealing the storage fluid inlet, whereby the storage fluid is essentially inert with respect to the photomask. The method then includes opening the container opening and contacting a surface of the photomask with an alcohol-containing gas while removing the photomask from the storage container to remove the storage fluid from the photomask surface.

Growing community of inventors

Burlington, VT, United States of America

Emily Gallagher