Rohm & Haas Electronic Materials LLC

Rohm and Haas Electronic Materials Korea Ltd.

Dupont Electronic Materials International, LLC

Dow Global Technolgoies LLC

Emad Aqad

Mingqi Li

Cheng-Bai Xu

James F Cameron

James W Thackeray

Cong Liu

Shintaro Yamada

William Williams, Iii

Irvinder Kaur

Joseph Mattia

Sung Wook Cho

Joshua A Kaitz

Choong-Bong Lee

Tomas Marangoni

Peter Trefonas, Iii

Phillip Dene Hustad

Deyan Wang

George G Barclay

Jong Keun Park

Suzanne M Coley

Hye-Won Lee

Owendi Ongayi

Gregory P Prokopowicz

Li Cui

Thomas Cardolaccia

Ke Yang

Jibin Sun

Sheng Liu

Jung-June Lee

Jae Hwan Sim

Jae-Bong Lim

Amy M Kwok

Iou-Sheng Ke

Cecily Andes

Xisen Hou

Cheng Bai Xu

Myung-Yeol Kim

Min Kyung Jang

Jae-Hwan Sim

Su Jin Kang

Joon Seok Oh

Jae-Yun Ahn

Ching-Lung Chen

Soo Jung Leem

ChoongBong Lee

Brandon Wenning

An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic Caromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R, R; Rand Rare as provided herein; optionally, Rand Rcan be taken together form a 5- to 7-membered ring; optionally, one of Rto Rcan be taken together with Rto form a 5- to 7-membered ring; wherein Rand Roptionally may be taken together to form a 5- to 7-membered ring; wherein one of Ror Roptionally may be taken together with Rto form a 5- to 7-membered ring; and when X is O, Rand Rare absent.

Underlayer compositions and patterning methods

A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

Photoresist compositions and pattern formation methods

Photoacid generators comprising a moiety of formula (1): wherein: Aris a substituted or unsubstituted aryl group; Ris an alkyl or aryl group, each of which may be substituted or unsubstituted, wherein Arand Rare optionally connected together by a single bond or a divalent linking group to form a ring; Y is a single bond or a divalent group; and * is the point of attachment of the moiety to another atom of the photoacid generator. The photoacid generator compounds find particular use in photoresist compositions that can be used to form lithographic patterns for the formation of electronic devices.

Photoacid generators, photoresist compositions, and pattern formation methods

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and Mare the same as described in the specification.

Photoresist composition, coated substrate including the photoresist composition, and method of forming electronic device

A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and Mis an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition

New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Monomers, polymers and lithographic compositions comprising same

New Te-salt compounds, including photoactive tellurium compounds useful for Extreme Ultraviolet Lithography.

Salts and photoresists comprising same

A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Zis an organic anion; Aris substituted or unsubstituted Cheteroaryl group comprising a furan heterocycle; and Ris substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Arand Rare optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Aror substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through Ror substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Zas a pendant group to a polymer; and a solvent.

New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Photoresist compositions and methods

A method for forming a photoresist relief image including applying a layer of a coating composition on a substrate; and disposing a layer of a photoresist composition on the layer of the coating composition, wherein the coating composition comprises an amine-containing polymer comprising a hydrocarbon-substituted amino group and having nitrogen atoms in an amount from 3 to 47 weight percent, based on a total weight of the amine-containing polymer.

Coating composition for use with an overcoated photoresist

New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Zwitterion compounds and photoresists comprising same

New Te-salts are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

An antireflective coating composition, including a polymer, a photoacid generator having a crosslinkable group, a compound capable of crosslinking the polymer and the photoacid generator, a thermal acid generator, and an organic solvent.

Method for forming pattern using antireflective coating composition including photoacid generator

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Northborough, MA, United States of America

Emad Aqad