Lam Research Corporation

Lam Rasearch Corporation

Elham Mohimi

Nagraj Shankar

Kapu Sirish Reddy

Pengyi Zhang

Jon Henri

Arpan Pravin Mahorowala

Bhavin Jariwala

Meliha Gozde Rainville

Jeffrey D Womack

Emile C Draper

Feng Bi

Pankaj G Ramnani

Dennis Michael Hausmann

David Charles Smith

Alexander R Fox

Paul C Lemaire

Kashish Sharma

Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M) on top of a base material (M) of a substrate, Mdefining a pattern for etching Min areas where Mis not present above M. The method further includes operations for conformally capping the substrate with an oxide material (M) after adding M, and for gap filling the substrate with filling material Mafter the conformally capping. Further, a stop-etch material (M) is selectively grown on exposed surfaces of Mand not on surfaces of Mafter the gap filling. Additionally, the method includes operations for removing Mfrom the substrate after selectively growing M, and for etching the substrate after removing Mto transfer the pattern into M. Madds etching protection to enable deeper etching into M

Selective deposition of etch-stop layer for enhanced patterning

Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

Showerhead with air-gapped plenums and overhead isolation gas distributor

A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

Pre-treatment method to improve selectivity in a selective deposition process

Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M) on top of a base material (M) of a substrate, Mdefining a pattern for etching Min areas where Mis not present above MThe method further includes operations for conformally capping the substrate with an oxide material (M) after adding Mand for gap filling the substrate with filling material Mafter the conformally capping. Further, a stop-etch material (M) is selectively grown on exposed surfaces of Mand not on surfaces of Mafter the gap filling. Additionally, the method includes operations for removing Mfrom the substrate after selectively growing Mand for etching the substrate after removing Mto transfer the pattern into MMadds etching protection to enable deeper etching into M

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Hillsboro, OR, United States of America

Elham Mohimi