Advanced Micro Devices Corporation

Globalfoundries Inc.

Ekkehard Pruefer

Klaus Hempel

Ralf Van Bentum

Stephan Kruegel

Markus Lenski

By modifying the dielectric liner for a spacer structure so as to exhibit an enhanced diffusion blocking characteristic, for instance by incorporating nitrogen, the out-diffusion of P-dopants, such as boron, into the dielectric material may be significantly reduced. Consequently, transistor performance, especially of P-type transistors, may be significantly enhanced while nevertheless a high degree of compatibility with conventional techniques may be maintained.

Drain/source extension structure of a field effect transistor with reduced boron diffusion

By consuming a surface portion of polysilicon material or silicon material after implantation and prior to activation of dopants, contaminants may be efficiently removed, thereby significantly enhancing the process uniformity during a subsequent silicidation process. Hence, the defect rate during the silicidation process, for instance 'missing silicide' defects, may be significantly reduced, thereby also enhancing the reliability of static RAM cells.

Method for reducing silicide defects by removing contaminants prior to drain/source activation

By forming a non-oxidizable liner in isolation trenches, the creation of compressive stress may be significantly reduced, wherein, in illustrative embodiments, silicon nitride may be used as liner material. For this purpose, the etch behavior of the silicon nitride may be efficiently modified on the basis of an appropriate surface treatment, thereby providing a high degree of material integrity during a subsequent etch process for removing non-modified portions of silicon nitride, which may also be used as an efficient CMP stop layer.

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Dresden, Germany

Ekkehard Pruefer