Canon Anelva Corporation

Eisaku Watanabe

Tetsuro Ogata

Kazuya Konaga

Eitaro Morimoto

Shunichi Wakayanagi

Franck Ernult

Yoh Tanaka

Hanako Hirayama

The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.

Method for continuously forming noble metal film and method for continuously manufacturing electronic component

When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape.

Magnetic field control for uniform film thickness distribution in sputter apparatus

A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.

Plasma processing apparatus and electronic device manufacturing method

The present invention provides a method for manufacturing a semiconductor memory element including a chalcogenide material layer and an electrode layer, each having an improved adhesion, and a sputtering apparatus thereof. One embodiment of the present invention is the method for manufacturing a semiconductor memory element including: a first step of forming the chalcogenide material layer (); and a second step of forming a second electrode layer () on the chalcogenide material layer () by sputtering through the use of a mixed gas of a reactive gas and an inert gas, while applying a cathode voltage to a target. In the second step, introduction of the reactive gas is carried out at a flow rate ratio included in a hysteresis area () appearing in the relationship between a cathode voltage applied to the cathode and the flow rate ratio of the reactive gas in the mixed gas.

Method for manufacturing semiconductor memory element and sputtering apparatus

According to the present invention, a thin film having a desired thickness is formed on an inner sidewall of a step with excellent step coverage in a film forming step and an etching step at least once, respectively. In an embodiment of the present invention, a target material is deposited on a substrate () having a concave step () having an opening width or opening diameter of 3 &#x3bc;m or less and an aspect ratio of 1 or more. At this time, a film forming method according to the present invention has a first step of depositing a thin film onto a bottom () of the step () and a second step of forming a film on an inner sidewall () of the step () by re-sputtering the thin film deposited on the bottom () and the pressure in a process chamber in the second step is set lower than that in the process chamber in the first step and the ratio of anode power to cathode power in the second step is set greater than the power ratio in the first step.

Growing community of inventors

Komae, Japan

Eisaku Watanabe