Hitachi, Ltd.

Eiji Setoyama

Mitsuhiro Kamei

Hajime Murakami

Youichi Ohshita

Hirofumi Seki

Kouji Ishiguro

Shinzou Oikawa

Tadashi Sato

Satoshi Ichimura

Shigeru Tanaka

Yasuhiro Mochizuki

Satoshi Takemori

Keiji Arimatsu

Yasunori Ohno

Ken-ichi Natsui

Katsunori Nakajima

Yukio Nakagawa

Hiroyuki Shida

Sensuke Okada

Satoshi Umehara

Koji Ishiguro

Hikaru Saruta

Sigeki Yamamura

According to the present invention, a signal transmission system is arranged in a region surrounded by a gas control means and a plurality of blocks whereby a region between elements constituting a gas supply flow path can be utilized for the region of the signal transmission system thereby to make the occupying space small and miniaturize the apparatus.

Gas supply apparatus and film forming apparatus

A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that they can be moved up and down.

Plasma processing apparatus and method of cleaning the apparatus

Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Plasma processing apparatus with a dielectric body in the waveguide

A multi-chamber sputtering apparatus characterized in that a plurality of target electrodes and a substrate transfer mechanism which is able to transfer a substrate to positions facing the target electrodes and change distance between the target electrodes and the substrate.

Multi-chamber sputtering apparatus

In accordance with the present invention, in order to exchange a target under a vacuum condition without communicating a film-forming chamber with the atmosphere for exchange of the target, a substrate is located in a vacuum vessel and an opening portion is provided on a wall surface of the vacuum vessel opposite to the substrate which is formed with a thin film on its surface. A target exchanging chamber is disposed adjacent to the vacuum vessel so as to be communicated therewith through the opening portion. During film-formation, the interior of the vacuum vessel is maintained in a vacuum state by closing the opening portion with the target while the target exchanging chamber is communicated with the atmosphere and a spare target is contained therein. When exchanging the target, the air in the target exchanging chamber is exhausted to maintain the chamber in a vacuum state and the target is replaced with the spare target.

Sputtering apparatus, device for exchanging target and method for the

The number of times a substrate tray has been used and the amount of distortion of the substrate tray are measured. When the number of times of use or the distortion amount of the substrate tray exceed a predetermined value, respectively, the substrate tray is exchanged automatically.

Control apparatus and method for a substrate tray on an in-line

A film forming system including an evacuating unit, a pair of opposed electrodes and an RF voltage supplying unit for suppling RF voltages to the respective electrodes to generate a discharge between the electrodes to form a film. The film forming system includes: a discharge variation detecting unit for detecting an amount of a variation in the discharge as a voltage from each of the electrodes; and a phase adjusting unit for detecting the difference in phase between the RF voltages supplied to the electrodes, and for adjusting the phase difference of the RF voltages supplied to the electrodes, according to the difference between the detected phase difference and a preset value.

Film forming system using high frequency power and power supply unit for

An apparatus for forming a thin film of a given material on one or more substrates comprises a vacuum vessel, a first electrode which is provided in the vacuum vessel for holding a target plate of the given material thereon, a second electrode which is provided opposite to the first electrode in the vacuum vessel to form a discharge space between the first and second electrodes and holds the substrate(s) thereon, a gas conduit for supplying a sputtering gas into the discharge space, power sources for applying a discharge voltage between the first and second electrodes to generate a discharge plasma of the sputtering gas, and a magnetic field generating device which is provided to surround the discharge space and generates a magnetic field effective to prevent the discharge plasma from diffusing to the outside of the discharge space.

Sputtering apparatus for forming thin films

A vacuum treatment apparatus includes a vacuum chamber having a first treatment position and at least one second treatment position where a substrate supported on a substrate stage subjected to a vacuum treatment. A drive device is operatively connected to a holding device to drive the same so that the holding device can move the substrate stage between the first and second treatment positions. The drive device is also operable to drive the holding device so that the holding device can rotate the substrate stage about the axis thereof at the first treatment position. A rotating device is provided for rotating the substrate stage about the axis thereof when the substrate stage is disposed at the second treatment position.

Vacuum treatment apparatus and vacuum treatment method

A thin film deposition system for depositing a thin film on a substrate by sputtering is characterized in that a substrate holder for holding thereon the substrate is transferred by a transfer mechanism from or to a film deposition position to or from another position such as another chamber different from the film deposition chamber, an electrode for applying bias voltage of radio frequency to the substrate or substrate holder is axially movable relatively to the substrate holder so that the electrode can be contacted with or discontact from the substrate holder, and a grounded shield is provided so as to cover the electrode and the substrate holder with a gap thereby shielding radio frequency from the electrode and the substrate holder to prevent formation of glow discharge between a wall of the vacuum chamber and the electrode or the substrate holder.

Thin film deposition system

A magnetic film deposition chamber having Helmholtz coils and a preliminary chamber are connected through a gate valve. Two magnetic plates are fixed to the magnetic film deposition chamber near the both ends thereof. Substrates overlying apertures of a substrate holder are moved by a conveyer together with the substrate holder. The conveyor moves from the preliminary chamber to the film deposition chamber through the gate valve. The substrates then positioned over and between the magnetic plates and are located above the target in the magnetic film deposition chamber.

Sputtering apparatus for production of thin films of magnetic materials

A magnetron sputter apparatus according to the present invention is constructed so as to satisfy a predetermined optimum relationship between the size of the erosion area on the surface of the target and that of a film forming region. Further, the distance between the target and substrates has a value predetermined for the relationship between the size of the erosion area on the surface of the target and that of the film forming region. By using the magnetron sputter apparatus according to the present invention it is possible to form a homogeneous thin film excellent in step coverage and having a film thickness distribution in which variations are small over a large area.

Magnetron sputter apparatus and method for forming films by using the

A sputtering apparatus for sputtering magnetic materials. The apparatus comprises at least one pair of magnetic field-generating sources, a substrate disposed within the magnetic field-generating sources, a target disposed opposite to the substrate, and a magnetic thin plate disposed at a side of the substrate which is remote from the target. The magnetic thin plate is disposed at a position in close contact with the substrate or a position slightly away from the substrate, or is disposed movably between such positions. When sputtering a magnetic material onto the substrate, a uniform magnetic field can be generated on the substrate surface by virtue of the provision of the thin magnetic plate.

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Hitachi, Japan

Eiji Setoyama