Fuji Electric Co., Ltd.

Ricoh Company, Ltd.

Fuji Electric Device Technology Co., Ltd.

Wisconsin Alumni Research Foundation

Fuji Electric Systems Co. Ltd.

Stanley Electric Co., Ltd

Eiji Mochizuki

Tatsuo Nishizawa

Yoshinari Ikeda

Yoshitaka Nishimura

Motohito Hori

Mitsumi Fujii

Masafumi Horio

Shinji Tada

Yoshinori Hayashi

Tomohiro Nakajima

Yoshikazu Takahashi

Ryoichi Kato

Rikihiro Maruyama

Fumihiko Momose

Kyohei Fukuda

Masayuki Soutome

Yoshito Kinoshita

Hiroyuki Nogawa

Robert Donald Lorenz

Katsumichi Ueyanagi

Hideyo Nakamura

Akira Morozumi

Tadanori Yamada

Takashi Saito

Toshio Denta

Yukito Satoh

Tetsurou Saitoh

Mitsutoshi Sawano

Takaaki Suzawa

Minhao Sheng

Toshiyuki Yokomae

Osamu Ikawa

Norio Arikawa

Katsumi Yamada

Hiroshi Miura

Shin Soyano

Takeshi Matsushita

Makoto Tanaka

Tadashi Miyasaka

Masahiro Kikuchi

Kouichi Ohtaka

Yoshiaki Yasuda

Yasuhiro Satoh

Masaaki Ogino

Kazunaga Onishi

Masayuki Fujishima

Yukito Sato

Shunsuke Saito

Masanao Tani

Yuhei Nishida

Akira Hirao

Kohki Sasaki

Masahiro Akamatsu

Seiichi Kato

Daiki Minegishi

Kazunaga Ohnishi

Katsuhiko Yoshihara

Masaaki Chino

Motokiyo Yokoyama

Tomonobu Sugiyama

Seiji Momoto

Syuuji Miyashita

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a sintered metal such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

Manufacturing method of packaging structure for bipolar transistor with constricted bumps

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a metal sintered material such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

Packaging structure for bipolar transistor with constricted bumps

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate. The module further includes a semiconductor device having upper and lower surfaces, and including a collector electrode on the device upper surface, an emitter electrode and a gate electrode on the device lower surface, and the emitter electrode and the gate electrode each being bonded to an upper surface of the circuit pattern via a bump, and a block electrode bonded to the collector electrode. The block electrode includes a flat plate portion covering over the semiconductor device, and a pair of projecting portions projecting toward the circuit pattern from both ends of the flat plate portion in a thickness direction orthogonal to a surface of the insulating plate, and being bonded to the circuit pattern.

Semiconductor module having block electrode bonded to collector electrode and manufacturing method thereof

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Method and apparatus for integrating current sensors in a power semiconductor module

A MOS gate structure including a p base region, a p epitaxial layer, an nsource region, a pcontact region, an n inversion region, a gate insulating film, and a gate electrode and a front surface electrode are provided on the front surface of an epitaxial substrate obtained by depositing an nepitaxial layer on the front surface of a SiC substrate. A first metal film is provided on the front surface electrode so as to cover 10% or more, preferably, 60% to 90%, of an entire upper surface of the front surface electrode. The SiC-MOSFET is manufactured by forming a rear surface electrode, forming the first metal film on the surface of the front surface electrode, and annealing in a Natmosphere. According to this structure, it is possible to suppress a reduction in gate threshold voltage in a semiconductor device using a SiC semiconductor.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device includes a radiation plate having a rear surface roughened by a plurality of dents that overlap with each other; a laminated substrate provided on a front surface of the radiation plate and including an insulating plate, a circuit board provided on a front surface of the insulating plate, and a metal plate provided on a rear surface of the insulating plate; a semiconductor chip provided on the circuit board; a radiator; and a heat radiating material retained between the rear surface of the radiation plats and the radiator. The plurality of dents that roughen the rear surface of the radiation plate provides the rear surface with an arithmetic average roughness ranging from 1 &#x3bc;m to 10 &#x3bc;m, and each of the dents has a maximum dent depth ranging from 12 &#x3bc;m to 71.5 &#x3bc;m, and a dent width ranging from 0.17 mm to 0.72 mm.

Semiconductor device

A power semiconductor module includes a cooler; a plurality of power semiconductor units fixed on the cooler; and a bus bar unit connected electrically to the plurality of power semiconductor units. Each of the plurality of power semiconductor units includes a multilayered substrate including a circuit plate, an insulating plate, and a metal plate laminated in respective order; a semiconductor element fixed to the circuit plate; a wiring member having a printed circuit board and a plurality of conductive posts; external terminals connected electrically and mechanically to the circuit plate; and an insulating sealing material. The bus bar unit includes a plurality of bus bars mutually connecting the external terminals of the plurality of power semiconductor units.

Power semiconductor module

A semiconductor device includes a heat-dissipating base, a first conductive layer bonded to the top surface of the heat-dissipating base, an AlN insulating substrate bonded to the top surface of the first conductive layer, and an electrode terminal having one edge bending to form a bonding edge whose bottom surface faces the top surface of the second conductive layer and is solid-state bonded to a portion of the top surface of the second conductive layer. The crystal grain diameter at the bonded interface of the second conductive layer and electrode terminal is less than or equal to 1 &#x3bc;m, and indentations from the ultrasonic horn are left in the top surface of the bonding edge.

Semiconductor device and method of manufacturing same

A semiconductor device includes: a semiconductor module and a heat dissipation sheet attached to a bottom surface of the semiconductor module, the heat dissipation sheet including: a sheet-shaped first conduction part that has a first main surface bonded to the bottom surface of the circuit substrate, a thermal conductivity of the first conduction part in directions along the first main surface being higher than a thermal conductivity of the first conduction part in a thickness direction; and a sheet-shaped second conduction part that is provided next to the first conduction part at an end of the first conduction part and that has a second main surface continuing from the first main surface, a thermal conductivity of the second conduction part in a thickness direction being higher than a thermal conductivity of the second conduction part in directions along the second main surface.

Semiconductor device with heat dissipation and method of making same

A semiconductor module includes sealing resin from which a main terminal protrudes, which seals an insulating substrate. The module includes a semiconductor element and a wiring substrate. The sealing resin has a nut housing portion in which a nut is disposed. The semiconductor module also has a busbar terminal to which a main terminal that protrudes from the sealing resin is electrically connected and which has an insertion hole facing the nut.

Semiconductor module

A semiconductor device according to the invention includes an insulating substrate including an insulating plate, a circuit pattern that is formed on a front surface of the insulating plate, and a radiator plate that is fixed to a rear surface of the insulating plate, a semiconductor chip that is fixed to the circuit pattern, an external lead terminal that is connected to a surface electrode of the semiconductor chip through a wiring line, a molding resin that covers the insulating substrate, the semiconductor chip, the wiring line, and the external lead terminal such that a rear surface of the radiator plate and a portion of the external lead terminal are exposed, and an anchor layer including a stripe-shaped concave portion which is formed in the circuit pattern by laser beam irradiation.

A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth Lof each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Semiconductor device and method for manufacturing the semiconductor device

A thermocompression bonding structure includes a first member and a second member having a linear expansion coefficient different from that of the first member; and metal fine particles interposed between the first and second members as a bonding material to thermocompression bond the two members. The two members are disposed to apply thermal stress generating between the first member and the second member as pressurizing force on a bonding surface between the two members, and to increase temperature to thermocompression bond the first member and the second member.

Thermocompression bonding structure and thermocompression bonding method

A semiconductor device composed of a plurality of semiconductor modules exhibiting a large current carrying capacity for a semiconductor device as a whole is disclosed. The connection between the plurality of semiconductor modules is conducted by means of optimum construction suited to the semiconductor device. The device comprises a semiconductor module having externally connecting terminals protruding out of a casing, bus bars electrically connecting the specific externally connecting terminals of the plurality of semiconductor modules arranged in parallel with each other, and a semiconductor module case covering and fastening the plurality of semiconductor modules connected with the bus bars. The bus bars and the externally connecting terminals of the semiconductor modules are joined by means of laser welding.

Growing community of inventors

Matsumoto, Japan

Eiji Mochizuki