Nippon Steel Corporation

Nippon Steel Materials Co., Ltd.

Other

Ball Semiconductor Corporation

Nippon Steel & Sumikin Materials Co., Ltd.

Nippon Steel Sumitomo Metal Corporation

Eiji Hashino

Kenji Shimokawa

Kohei Tatsumi

Shinji Ishikawa

Nobuo Takeda

Atsuyuki Fukano

Kouhei Tatumi

Shinichi Terashima

Masamoto Tanaka

Toshiya Kinoshita

Ryuichi Araki

Setsuo Sato

According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/&#x3bc;m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Lead-free solder bump bonding structure

The periphery of a mask () is formed higher than a region where a ball holding hole () is formed, a work () is arranged at a lower section of the ball holding hole () of the mask (), and the ball holding hole () and an electrode of the work () are aligned with each other. A ball (B) is applied on the mask (), and in such state, vibration is applied to the mask () to move the solder ball (B) on the surface of the mask () and drop the solder ball (B) into the ball holding hole (). The periphery of the mask () is permitted to be lower than the ball holding hole (), and an excessive portion of the solder ball (B) is recovered from over the mask ().

Solder ball mounting method and apparatus

Disclosed are CMP conditioners which can suppress microscratching of the surface of a semiconductor substrate and can realize stable CMP conditioner properties. The CMP conditioner according to the first aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on a surface of the support member, wherein the plurality of hard abrasive grains are regularly arranged on the surface of the support member. The CMP conditioner according to the second aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on the surface of the support member, wherein the plurality of hard abrasive grains are arranged on the surface of the support member regularly and so as for the density of the hard abrasive grains to decrease from the inner side of the support member toward the outer side of the support member.

CMP conditioner, method for arranging hard abrasive grains for use in CMP conditioner, and process for producing CMP conditioner

Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

Ball transferring method and apparatus

A semiconductor device () comprising electrodes formed on a semiconductor chip () and bumps () which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (). The electrodes () are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer () composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls () are adhesive bonded to the electrodes () preferably with a flux. The low melting point metal balls () adhesive bonded to the respective electrodes () may also be reflowed to form semispherical bumps () before use.

Method for fabricating a semiconductor devices provided with low melting point metal bumps

Semiconductor device provided with low melting point metal bumps

A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

Spherical semiconductor device and method for fabricating the same

The object of the present invention is to provide a free and precise control of the plating amount while easily determining a selected portion to be plated. Small ballsare arranged at, and adhered or bonded to, via holesof a TAB tapeand the small ballsare then melted so that a copper wiringexposed at the via holesof the TAB tapecan be selectively plated with a different metal to enable selected portions of a substrate for electronic devices to be partially plated easily and precisely.

Method of partially plating substrate for electronic devices

A ball-arranging substrate comprising a substrate with a main surface, a plurality of ball-arranging holes formed on the main surface for sucking and holding minute electroconductive balls at the locations corresponding to those of electrodes formed on a semiconductor device or a printed circuit board, wherein when light illuminates the ball-arranging surface to allow optical recognition of the arrangement of the minute electroconductive balls by means of the light reflected by the minute electroconductive balls and by the main surface, the wave length of the light of the light source is set in the range of 300 to 900 nm, and the reflectivity is made not more than 50% based on the light source. A reflective mirror should be provided on the rear surface of the substrate opposite to the light source, in the case when the substrate is transparent to the irradiated light.

Ball-arranging substrate for forming bump, ball-arranging head, ball-arranging device, and ball-arranging method

A process of transferring a flux on electrodes of a semiconductor chip, a film carrier, or a substrate, the process comprising: using a transfer apparatus including a transfer baseplate having protrusions corresponding to said electrodes; dipping the tips of the protrusions of the transfer baseplate in a flux bath to cause the flux to stick to the tips; then aligning the protrusions of the transfer baseplate with the electrodes; and transferring the stuck flux onto the electrodes from the tips.

Transfer of flux onto electrodes and production of bumps on electrodes

A process of producing small metal bumps includes the steps of simultaneously holding small metal balls on an arrangement baseplate in the positions corresponding to those of electrodes of a semiconductor chip, a film carrier, or a substrate; aligning the small metal balls held on the arrangement baseplate with the electrodes; lightly pressing the small metal balls against the electrodes; to provisionally fix the balls to the electrodes; and pressing the provisionally fixed small metal balls to flatten the pressed surfaces of the small metal balls, and at the same time, to bond the small metal balls to the electrodes.

Growing community of inventors

Chiba, Japan

Eiji Hashino