Shin-Etsu Chemical Co., Ltd.

Eiji Fukuda

Youichi Ohsawa

Takeshi Kinsho

Yoshio Kawai

Katsuya Takemura

Tomohiro Kobayashi

Masayoshi Sagehashi

Takayuki Nagasawa

Ryosuke Taniguchi

Katsuhiro Kobayashi

Akihiro Seki

Shigeo Tanaka

A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.

Positive resist composition and patterning process

Provided is a contact hole forming method, wherein in a thermal flow step the contact hole size can be fixed after thermal flow even if the resist material lot changes, or, wherein at the same bake temperature the contracted size, namely the flow amount, can be fixed. More specifically, provided is a contact hole forming method comprising a step of coating a resist material onto a substrate, a step of heating the coated resist material, a step of exposing the heated resist material to light through a photo mask adapted for a contact hole pattern, a step of heating the exposed resist material, a step of forming the contact hole pattern subsequently by developing with a developing fluid and a step of thermal flow treatment for heating the obtained contact hole pattern, wherein the resist material comprises an organic compound which does not react with the other components within the resist material and does not change a resolution property, and wherein when the resist material lot is changed, an amount of the organic compound to be added is changed so as to keep the contact hole pattern identical before and after the lot change.

Fine contact hole forming method employing thermal flow process

Provided are sulfonyldiazomethane compounds and photoacid generators suited for resist materials which generate less foreign matters after application, development and peeling, and in particular, are excellent in the pattern profile after the development; and resist materials and patterning process using them. Provided are sulfonyldiazomethane compounds represented by formula (1): Also provides are photoacid generators containing the sulfonyldiazomethane compounds, and a chemical amplification resist material comprising (A) a resin which changes its solubility in an alkali developer by action of an acid, and (B) a sulfonyldiazomethane compound of formula (1) capable of generating an acid by exposure to radiation. Provided is a patterning process comprising steps of applying the above-described resist material onto a substrate to form a coating, heating the coating, exposing the coating, and developing the exposed coating in a developer after an optional heat treatment.

Sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning using the same

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Niigata-ken, Japan

Eiji Fukuda