Applied Materials Israel Limited

Efrat Noifeld

Ishai Schwarzband

Roman Kris

Shimon Levi

Yakov Weinberg

Vadim Vereschagin

Grigory Klebanov

Sharon Duvdevani-Bar

Ran Goldman

Yan Ivanchenko

Sahar Levin

Ori Shoval

Kasturi Saha

Taku Yoshizawa

Dan Lange

Arbel Englander

Roi Meir

Hiroshi Miroku

A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

Method, system and computer program product for 3D-NAND CDSEM metrology

A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

CD-SEM technique for wafers fabrication control

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Rehovot, Israel

Efrat Noifeld