Applied Materials, Inc.

Edward W Budiarto

Todd J Egan

Thomas E Nowak

Terrance Y Lee

Jeongmin Lee

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Bok Hoen Kim

Amit Kumar Bansal

Jianhua Zhou

Xinhai Han

Jian J Chen

Ramprakash Sankarakrishnan

Mohamad A Ayoub

Nagarajan Rajagopalan

Zhijun Jiang

Michael Wenyoung Tsiang

Patrick Reilly

Masaki Ogata

Heung Lak Park

Shahid Shaikh

Sergey Starik

Dmitriy Panasyuk

Mehdi Vaez-Iravani

Edgar Genio

Guoheng Zhao

Peter G Borden

Majeed Foad

Dale Robert Du Bois

Dmitry A Dzilno

Ralf Hofmann

Abraham Ravid

Khokan Chandra Paul

Jeffrey C Hudgens

Nag B Patibandla

Daniel J Woodruff

Nir Merry

Mingwei Zhu

Yong Cao

Daniel Lee Diehl

Weimin Zeng

Robert W Batz, Jr

Zihao Yang

Avishek Ghosh

Venkatakaushik Voleti

Mitchell DiSanto

Bridger Earl Hoerner

Hari Kishore Ambal

Karen Lingel

Niranjan Ramchandra Khasgiwale

Eric Chin Hong Ng

Robert O Miller

Renjing Zheng

Surender Kumar Gurusamy

A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.

Spatial pattern loading measurement with imaging metrology

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD process

Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

Methods and systems to measure properties of products on a moving blade in electronic device manufacturing machines

Implementations disclosed describe a system comprising a first optical device to receive an input beam of light, the input beam having a plurality of spectral components of light, and cause the input beam to disperse into a plurality of spectral beams, wherein each of the plurality of spectral beams corresponds to one of the plurality of spectral components and propagates along a spatial path that is different from spatial paths of other spectral beams, and a second optical device to collect a portion of each of the spectral beams, wherein the collected portion depends on the spatial path of the respective spectral beam, and form an output beam of light from the collected portion of each of the spectral beams, wherein a spectral profile of the output beam is different from a spectral profile of the input beam of light.

Spectrum shaping devices and techniques for optical characterization applications

A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Optical stack deposition and on-board metrology

Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

In-situ metrology method for thickness measurement during PECVD processes

A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Monitoring system for deposition and method of operation thereof

An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Electroplating tool with feedback of metal thickness distribution and correction

A measurement tool includes a rotation stage supporting an workpiece support, a thickness sensor overlying a workpiece support surface; a translation actuator coupled to the thickness sensor for translation of the thickness sensor relative to the workpiece support surface; and a computer coupled to control the rotation actuator and the translation actuator, and coupled to receive an output of the thickness sensor.

Fast and continuous eddy-current metrology of a conductive film

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD apparatus and process

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Fremont, CA, United States of America

Edward W Budiarto